All Transistors. LMBT2222ALT1G Datasheet

 

LMBT2222ALT1G Datasheet, Equivalent, Cross Reference Search

Type Designator: LMBT2222ALT1G

SMD Transistor Code: 1P

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 0.225 W

Maximum Collector-Base Voltage |Vcb|: 75 V

Maximum Collector-Emitter Voltage |Vce|: 40 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 0.6 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 300 MHz

Collector Capacitance (Cc): 8 pF

Forward Current Transfer Ratio (hFE), MIN: 100

Noise Figure, dB: -

Package: SOT23

LMBT2222ALT1G Transistor Equivalent Substitute - Cross-Reference Search

 

LMBT2222ALT1G Datasheet (PDF)

1.1. lmbt2222alt1g.pdf Size:503K _lrc

LMBT2222ALT1G
LMBT2222ALT1G

LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon LMBT2222ALT1G ●FEATURES S-LMBT2222ALT1G 1) We declare that the material of product compliant with RoHS requirements and Halogen Free. 3 2) S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. 1 2 SOT-23 ●DEVICE MARKING AN

1.2. lmbt2222att1g.pdf Size:117K _lrc

LMBT2222ALT1G
LMBT2222ALT1G

LESHAN RADIO COMPANY, LTD. General Purpose Transistor LMBT2222ATT1G NPN Silicon S-LMBT2222ATT1G These transistors are designed for general purpose amplifier applications. They are housed in the SC-89 package which is designed for low power surface mount applications. Features compliance with RoHS requirements. • We declare that the material of product • S- Prefix for Automotive

1.3. lmbt2222adw1t1g.pdf Size:250K _lrc

LMBT2222ALT1G
LMBT2222ALT1G

LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors NPN Silicon LMBT2222ADW1T1G S-LMBT2222ADW1T1G We declare that material of product compliance with ROHS requirements. S- Prefix for Automotive and Other Applications Requiring 6 5 Unique Site and Control Change Requirements; 4 AEC-Q101 Qualified and PPAP Capable. 1 2 MAXIMUM RATINGS 3 Rating Symbol Value Unit SC-

1.4. lmbt2222awt1g.pdf Size:62K _lrc

LMBT2222ALT1G
LMBT2222ALT1G

LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon These transistors are designed for general purpose amplifier applications. They are LMBT2222AWT1G housed in the SOT–323/SC–70 package which S-LMBT2222AWT1G is designed for low power surface mount applications. We declare that the material of product 3 compliance with RoHS requirements. S- Prefix for Automotive a

Datasheet: LMBT5551DW1T1G , LMBT5551LT1G , LMBT6427LT1G , LMBT6428LT1G , LMBT6517LT1G , LMBT6520LT1G , LMBT918LT1G , LMBT2222ADW1T1G , 2N3055 , LMBT2222ATT1G , LMBT2222AWT1G , LMBT2907ADW1T1G , LMBT2907ALT1G , LMBT2907AWT1G , LMBT3904DW1T1G , LMBT3904LT1G , LMBT3904N3T5G .

 


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