All Transistors. 2N649-5 Datasheet

 

2N649-5 Datasheet and Replacement


   Type Designator: 2N649-5
   Material of Transistor: Ge
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.1 W
   Maximum Collector-Base Voltage |Vcb|: 20 V
   Maximum Collector-Emitter Voltage |Vce|: 18 V
   Maximum Emitter-Base Voltage |Veb|: 2 V
   Maximum Collector Current |Ic max|: 0.05 A
   Max. Operating Junction Temperature (Tj): 120 °C
   Transition Frequency (ft): 12 MHz
   Forward Current Transfer Ratio (hFE), MIN: 50
   Noise Figure, dB: -
   Package: TO5
 

 2N649-5 Substitution

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2N649-5 Datasheet (PDF)

 9.1. Size:231K  rca
2n649.pdf pdf_icon

2N649-5

 9.2. Size:97K  1
2n6354 2n6496.pdf pdf_icon

2N649-5

 9.3. Size:151K  motorola
2n6487 2n6488 2n6490 2n6491.pdf pdf_icon

2N649-5

Order this documentMOTOROLAby 2N6487/DSEMICONDUCTOR TECHNICAL DATANPN2N6487Complementary Silicon PlasticPower Transistors*2N6488PNP. . . designed for use in generalpurpose amplifier and switching applications. DC Current Gain Specified to 15 Amperes 2N6490hFE = 20150 @ IC = 5.0 AdchFE = 5.0 (Min) @ IC = 15 Adc2N6491* CollectorEmitter Sustaining

 9.4. Size:148K  motorola
2n6497 2n6498.pdf pdf_icon

2N649-5

Order this documentMOTOROLAby 2N6497/DSEMICONDUCTOR TECHNICAL DATA2N64972N6498*High Voltage NPN Silicon Power*Motorola Preferred DeviceTransistors5 AMPERE. . . designed for high voltage inverters, switching regulators and lineoperatedPOWER TRANSISTORSamplifier applications. Especially well suited for switching power supply applications.NPN SILICON High Collecto

Datasheet: 2N649 , 2N6490 , 2N6491 , 2N6492 , 2N649-22 , 2N6493 , 2N6494 , 2N6495 , 2SC828 , 2N6496 , 2N6497 , 2N6498 , 2N6499 , 2N65 , 2N650 , 2N6500 , 2N6501 .

History: BDW21 | BU508A | STA434A | BDX47 | PMST2222A

Keywords - 2N649-5 transistor datasheet

 2N649-5 cross reference
 2N649-5 equivalent finder
 2N649-5 lookup
 2N649-5 substitution
 2N649-5 replacement

 

 
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