All Transistors. DTC114 Datasheet

 

DTC114 Datasheet and Replacement


   Type Designator: DTC114
   SMD Transistor Code: A8R
   Material of Transistor: Si
   Polarity: Pre-Biased-NPN
   Built in Bias Resistor R1 = 47 kOhm
   Maximum Collector Power Dissipation (Pc): 0.246 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 160
   Noise Figure, dB: -
   Package: SOT23
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DTC114 Datasheet (PDF)

 ..1. Size:282K  first silicon
dtc101-dtc108 dtc110-dtc112 dtc114 dtc117 dtc123 dtc124.pdf pdf_icon

DTC114

DTC 101 ~ 108SEMICONDUCTORDTC 110 ~ 112 / 114 /117TECHNICAL DATADTC 123 / 124Bias Resistor TransistorNPN Silicon Surface Mount Transistorwith Monolithic Bias Resistor NetworkThis new series of digital transistors is designed to replace a singledevice and its external resistor bias network. The BRT (Bias Resistor3Transistor) contains a single transistor with a monolithic bi

 0.1. Size:53K  motorola
pdtc114ts 2.pdf pdf_icon

DTC114

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D186PDTC114TSNPN resistor-equipped transistor1998 May 18Product specificationSupersedes data of 1997 Jul 03File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC114TSFEATURES Built-in bias resistor R1 (typ. 10 k) Simplification of circuit desi

 0.2. Size:52K  motorola
pdtc114tk 2.pdf pdf_icon

DTC114

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D114PDTC114TKNPN resistor-equipped transistor1998 May 19Product specificationSupersedes data of 1997 May 28File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC114TKFEATURES Built-in bias resistor R1 (typ. 10 k) Simplification of circuit desi

 0.3. Size:53K  motorola
pdtc114tu 3.pdf pdf_icon

DTC114

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D102PDTC114TUNPN resistor-equipped transistor1999 Apr 16Preliminary specificationSupersedes data of 1998 May 19Philips Semiconductors Preliminary specificationNPN resistor-equipped transistor PDTC114TUFEATURES Built-in bias resistor R1 (typ. 10 k)3handbook, 4 columns Simplification of circuit design3

Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2SD1047 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

History: 2SC1262 | 2SA1483 | BC167 | ECG2360 | BDX85B | FX5141 | SGSF321

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