DTC306 Specs and Replacement
Type Designator: DTC306
SMD Transistor Code: 8F
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 4.7 kOhm
Built in Bias Resistor R2 = 47 kOhm
Typical Resistor Ratio R1/R2 = 0.1
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.202 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 80
Package: SOT323
DTC306 Substitution
- BJT ⓘ Cross-Reference Search
DTC306 datasheet
dtc301-dtc311 dtc317 dtc322 dtc323.pdf 
DTC301 311 / DTC317 SEMICONDUCTOR TECHNICAL DATA DTC322 323 Bias Resistor Transistors NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network 3 This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network 2 consisti... See More ⇒
Detailed specifications: DTC123, DTC124, DTC137, DTC301, DTC302, DTC303, DTC304, DTC305, BD136, DTC307, DTC308, DTC309, DTC310, DTC311, DTC317, DTC322, DTC323
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