2N1229 Specs and Replacement
Type Designator: 2N1229
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.4 W
Maximum Collector-Base Voltage |Vcb|: 15 V
Maximum Collector-Emitter Voltage |Vce|: 15 V
Maximum Emitter-Base Voltage |Veb|: 15 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 0.5 MHz
Collector Capacitance (Cc): 180 pF
Forward Current Transfer Ratio (hFE), MIN: 25
Package: TO5
2N1229 Substitution
- BJT ⓘ Cross-Reference Search
2N1229 datasheet
Detailed specifications: 2N1221, 2N1222, 2N1223, 2N1224, 2N1225, 2N1226, 2N1227, 2N1228, 2SC828, 2N123, 2N1230, 2N1231, 2N1232, 2N1232A, 2N1233, 2N1234, 2N1235
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