2N6502 Datasheet. Specs and Replacement

Type Designator: 2N6502  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.6 W

Maximum Collector-Base Voltage |Vcb|: 80 V

Maximum Collector-Emitter Voltage |Vce|: 40 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 1 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Transition Frequency (ft): 250 MHz

Collector Capacitance (Cc): 10 pF

Forward Current Transfer Ratio (hFE), MIN: 50

Noise Figure, dB: -

Package: TO77

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2N6502 datasheet

 9.1. Size:52K  inchange semiconductor

 2n6500.pdf pdf_icon

2N6502

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N6500 DESCRIPTION Collector-Emitter Sustaining Voltage- VCEO(SUS)= 90V(Min) Wide Area of Safe Operation APPLICATIONS Designed for use in high-current, high-speed switching circuits such as low-distortion power amplifiers,oscillators, switching regulators, series regulators, converters... See More ⇒

Detailed specifications: 2N6496, 2N6497, 2N6498, 2N6499, 2N65, 2N650, 2N6500, 2N6501, MJE350, 2N6503, 2N650A, 2N651, 2N6510, 2N6511, 2N6512, 2N6513, 2N6514

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