2N6503 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2N6503
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.35 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 250 MHz
Collector Capacitance (Cc): 10 pF
Forward Current Transfer Ratio (hFE), MIN: 50
Noise Figure, dB: -
Package: TO89-3
2N6503 Transistor Equivalent Substitute - Cross-Reference Search
2N6503 Datasheet (PDF)
9.1. Size:52K inchange semiconductor
2n6500.pdf
2n6500.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N6500 DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 90V(Min) Wide Area of Safe Operation APPLICATIONS Designed for use in high-current, high-speed switching circuits such as:low-distortion power amplifiers,oscillators, switching regulators, series regulators, converters
Datasheet: 2N6497 , 2N6498 , 2N6499 , 2N65 , 2N650 , 2N6500 , 2N6501 , 2N6502 , TIP36C , 2N650A , 2N651 , 2N6510 , 2N6511 , 2N6512 , 2N6513 , 2N6514 , 2N6515 .
