FTB1424 Datasheet, Equivalent, Cross Reference Search
Type Designator: FTB1424
SMD Transistor Code: AEQ_AER
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.5 W
Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 240 MHz
Collector Capacitance (Cc): 35 pF
Forward Current Transfer Ratio (hFE), MIN: 120
Noise Figure, dB: -
Package: SOT89
FTB1424 Transistor Equivalent Substitute - Cross-Reference Search
FTB1424 Datasheet (PDF)
ftb1424.pdf
SEMICONDUCTORFTB1424TECHNICAL DATAFTB1424 TRANSISTOR (PNP) AC HGFEATURES Excellent DC Current Gain Low Collector-emitter saturation voltage DD Complement the FTD2150 KF FDIM MILLIMETERSA 4.70 MAX_+B 2.50 0.20C 1.70 MAX1 2 3D 0.45+0.15/-0.10E 4.25 MAX _+F 1.50 0.10G 0.40 TYP1. BASEMAXIMUM RATINGS (Ta=25 unless otherwise noted
ftb1412d.pdf
SEMICONDUCTORFTB1412TECHNICAL DATAFTB1412 TRANSISTOR (PNP) AIFEATURESCJ Power Amplifier ApplicationsDIM MILLIMETERSA 6 50 0 2B 5 60 0 2C 5 20 0 2MAXIMUM RATINGS (Ta=25 unless otherwise noted) D 1 50 0 2E 2 70 0 2F 2 30 0 1Symbol Parameter Value Unit HH 1 00 MAXVCBO Collector-Base Voltage -30 V I 2 30 0 2LF FJ 0 5 0 1VC
ftb1412.pdf
SEMICONDUCTORFTB1412TECHNICAL DATAFTB1412 TRANSISTOR (PNP) AIFEATURESCJ Power Amplifier ApplicationsDIM MILLIMETERSA 6 50 0 2B 5 60 0 2C 5 20 0 2MAXIMUM RATINGS (Ta=25 unless otherwise noted) D 1 50 0 2E 2 70 0 2F 2 30 0 1Symbol Parameter Value Unit HH 1 00 MAXVCBO Collector-Base Voltage -30 V I 2 30 0 2LF FJ 0 5 0 1VC
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
