FTB772D Datasheet, Equivalent, Cross Reference Search
Type Designator: FTB772D
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 10 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 50 MHz
Forward Current Transfer Ratio (hFE), MIN: 60
Noise Figure, dB: -
Package: TO252 DPAK
FTB772D Transistor Equivalent Substitute - Cross-Reference Search
FTB772D Datasheet (PDF)
ftb772d.pdf
SEMICONDUCTORFTB772DTECHNICAL DATAFTB772D TRANSISTORAI FEATURESCJ Low Speed SwitchingDIM MILLIMETERSA 6 50 0 2B 5 60 0 2C 5 20 0 2 MAXIMUM RATINGS (Ta=25 unless otherwise noted) D 1 50 0 2E 2 70 0 2F 2 30 0 1Symbol Parameter Value Unit HH 1 00 MAXI 2 30 0 2LF FVCBO Collector-Base Voltage -40 V J 0 5 0 1L 0 50 0 101 2 3
ftb772.pdf
SEMICONDUCTORFTB772TECHNICAL DATAAUDIO FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHINGDEAFEATURESComplementary to FTD882. CF GDIM MILLIMETERSBA 8.3 MAXMAXIMUM RATING (Ta=25 )B 11.30.3C 4.15 TYP1 2 3D 3.20.2CHARACTERISTIC SYMBOL RATING UNITE 2.00.2H F 2.80.1IVCBO -40 VCollector-Base VoltageG 3.20.1H 1.270.1KVCEO -30 VCollector
ftb772f.pdf
SEMICONDUCTORFTB772FTECHNICAL DATA AFTB772F PNP TRANSISTORCHG FEATURES Low Speed SwitchingDDKF FDIM MILLIMETERSA 4.70 MAX_+B 2.50 0.20 MAXIMUM RATINGS (Ta=25 unless otherwise noted) C 1.70 MAX1 2 3D 0.45+0.15/-0.10E 4.25 MAX_+F 1.50 0.10Symbol Parameter Value Unit G 0.40 TYP1. BASEH 1.8 MAX2. COLLECTORVCBO Collector-Base Voltage -40
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
History: 2SD265
