2N6515 Datasheet and Replacement

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby 2N6515/DHigh Voltage TransistorsNPN2N6515*COLLECTOR COLLECTOR thru 2N65173 3PNP2 22N6519BASE BASENPN PNP2N6520*1 1Voltage and current are negativeEMITTER EMITTER for PNP transistorsMAXIMUM RATINGS*Motorola Preferred Device2N6516 2N65172N6519 2N6520Rating Symbol 2N6515 UnitCollectorEm

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby 2N6515/DHigh Voltage TransistorsNPNCOLLECTOR COLLECTOR2N65153 32N65172 2PNPBASE BASENPN PNP2N65191 1EMITTER EMITTER2N6520MAXIMUM RATINGSVoltage and current are negative2N6517 for PNP transistors2N6520Rating Symbol 2N6515 2N6519 UnitCollectorEmitter Voltage VCEO 250 300 350 VdcCollector

2N6515 NPN EPITAXIAL SILICON TRANSISTORHIGH VOLTAGE TRANSISTORTO-92 Collector-Emitter Voltage: VCEO= 250V Collector Dissipation: PC (max)=625mWABSOLUTE MAXIMUM RATINGS (T =25 )A Characteristic Symbol Rating UnitCollector-Base Voltage VCBO 250 VCollector-Emitter Voltage VCEO 250 VEmitter-Base Voltage VEBO 6 VCollector Current IC 500 mACollector Dissipation PC 625 mW

NPN - 2N6515, 2N6517;PNP - 2N6520High Voltage TransistorsNPN and PNPFeatureshttp://onsemi.com Voltage and Current are Negative for PNP TransistorsCOLLECTOR These are Pb-Free Devices*32BASEMAXIMUM RATINGSCOLLECTORNPNRating Symbol Value Unit31Collector - Emitter Voltage VCEO VdcEMITTER2N6515 25022N6517, 2N6520 350BASECollector - Base Voltage V

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON PLANAR EPITAXIAL TRANSISTORS 2N6515, 2N65192N6516, 2N65202N6517TO-92Plastic PackageHIGH VOLTAGE TRANSISTORSABSOLUTE MAXIMUM RATINGS (Ta=25C unless specified otherwise)DESCRIPTION SYMBOL 2N6515 2N6516 2N6517 UNIT2N6519 2N6520VCEOCollector Emitter Voltage 250 300 350 VV

2N6518High Voltage Transistor Collector-Emitter Voltage: VCEO= -250V Collector Dissipation: PC (max)=625mW Complement to 2N6515TO-9211. Emitter 2. Base 3. CollectorPNP Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value UnitsVCBO Collector-Base Voltage -250 VVCEO Collector-Emitter Voltage -250 VVEBO Emitt

2N6519High Voltage Transistor Collector-Emitter Voltage: VCEO= -300V Collector Dissipation: PC (max)=625mWTO-9211. Emitter 2. Base 3. CollectorPNP Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value UnitsVCBO Collector-Base Voltage -300 VVCEO Collector-Emitter Voltage -300 VVEBO Emitter-Base Voltage -5 VIC C

August 20102N6517NPN Epitaxial Silicon TransistorFeatures High Voltage Transistor Collector Dissipation: PC(max) = 625mW Complement to 2N6520 Suffix -C means Center Collector (1. Emitter 2. Collector 3. Base)TO-9211. Emitter 2. Base 3. CollectorAbsolute Maximum Ratings Ta = 25C unless otherwise notedSymbol Parameter Value UnitsVCBO Collector-Base Vo

2N6517 NPN EPITAXIAL SILICON TRANSISTORHIGH VOLTAGE TRANSISTORTO-92 Collector-Emitter Voltage: VCEO=350V Collector Dissipation: PC (max)=625mWABSOLUTE MAXIMUM RATINGS (T =25 )A Characteristic Symbol Rating UnitCollector-Base Voltage VCBO 350 VCollector-Emitter Voltage VCEO 350 VEmitter-Base Voltage VEBO 6 VCollector Current IC 500 mACollector Dissipation PC 625 mW

NPN Epitaxial SiliconTransistor2N6517Features High Voltage Transistorwww.onsemi.com Collector Dissipation: PC(max) = 625 mW Complement to 2N6520 Suffix -C means Center Collector (1. Emitter 2. Collector 3. Base)ABSOLUTE MAXIMUM RATINGS (Values are at TA = 25C unless otherwise noted.)Symbol Parameter Value UnitVCBO Collector-Base Voltage V1122

NPN Epitaxial SiliconTransistor2N6517Features High Voltage Transistorwww.onsemi.com Collector Dissipation: PC(max) = 625 mW Complement to 2N6520 Suffix -C means Center Collector (1. Emitter 2. Collector 3. Base)ABSOLUTE MAXIMUM RATINGS (Values are at TA = 25C unless otherwise noted.)Symbol Parameter Value UnitVCBO Collector-Base Voltage V1122

2N6511Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar NPN Device. 3VCEO = 250V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 7A 12.70 (0.50) All Semelab hermetically sealed products can be processed in a

2N6512Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar NPN Device. 3VCEO = 300V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 7A 12.70 (0.50) All Semelab hermetically sealed products can be processed in a

2N6517 0.5 A, 350V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES TO-92 High Voltage Transistors G H Complement of the 2N6520 EmitterBase JCollectorA DMillimeterBREF. CollectorMin. Max. A 4.40 4.70KB 4.30 4.70 C 12.70 -D 3.30 3.8

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate TransistorsTO 92 2N6517 TRANSISTOR (NPN) 1. EMITTERFEATURES 2. BASE Complement to 2N65203. COLLECTOR Equivalent Circuit

SEMICONDUCTOR2N6517 TECHNICAL DATAB C2N6517 TRANSISTOR (NPN) DIM MILLIMETERSA 4.70 MAXEFEATURES G B 4.80 MAXC 3.70 MAXD Complement To 2N6520 D 0.55 MAXE 1.00F 1.27G 0.85H 0.45_HJ 14.00 0.50L 2.30F FM 0.51 MAX1 2 31. EMITTER2. BASE3. COLLECTORTO-92MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collecto

2N6517M(3CG6517M) NPN /SILICON NPN TRANSISTOR :/Purpose: High voltage application. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 350 V CBO V 350 V CEO V 6.0 V EBO I 500 mA C P 300 mW CT 150 j T -55150 stg /Electrical characteristics(T