FTC3356 Datasheet, Equivalent, Cross Reference Search
Type Designator: FTC3356
SMD Transistor Code: R24
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Collector-Emitter Voltage |Vce|: 12 V
Maximum Emitter-Base Voltage |Veb|: 3 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 7000 MHz
Forward Current Transfer Ratio (hFE), MIN: 82
Noise Figure, dB: -
Package: SOT23
FTC3356 Transistor Equivalent Substitute - Cross-Reference Search
FTC3356 Datasheet (PDF)
ftc3356.pdf
SEMICONDUCTORFTC3356TECHNICAL DATADESCRIPTIONThe FTC3356 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. 3It has dynamic range and good current characteristic.21ORDERING INFORMATIONShippingDevice MarkingSOT23FTC3356 R24 3000/Tape & ReelFEATURES We declare that the material of product compliance with RoHS requ
ftc3356u.pdf
SEMICONDUCTORFTC3356UTECHNICAL DATADESCRIPTIONThe FTC3356U is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band.It has dynamic range and good current characteristic.3ORDERING INFORMATION1ShippingDevice Marking2FTC3356U R24 3000/Tape & ReelSC-70 / SOT 323 FEATURES We declare that the material of product compliance
ftc3303 to252.pdf
SEMICONDUCTORFTC3303TECHNICAL DATAFTC3303 TRANSISTOR (NPN) TO 252 FEATURES 1. BASE Low Collector Saturation Voltage High Speed Switching Time 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 7 V IC Collector Current
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
