All Transistors. FTC8050 Datasheet

 

FTC8050 Datasheet and Replacement


   Type Designator: FTC8050
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.625 W
   Maximum Collector-Base Voltage |Vcb|: 40 V
   Maximum Collector-Emitter Voltage |Vce|: 25 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 150 MHz
   Forward Current Transfer Ratio (hFE), MIN: 85
   Noise Figure, dB: -
   Package: TO92
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FTC8050 Datasheet (PDF)

 ..1. Size:222K  first silicon
 ftc8050.pdf pdf_icon

FTC8050

SEMICONDUCTORFTC8050TECHNICAL DATA TRANSISTOR (NPN) FTC8050B C FEATURES Complimentary to FTA8550 Collector current: IC=0.5ADIM MILLIMETERSA 4.70 MAXEB 4.80 MAXGMAXIMUM RATINGS (Ta=25 unless otherwise noted) C 3.70 MAXDD 0.55 MAXSymbol Parameter Value Unit E 1.00F 1.27G 0.85VCBO Collector-Base Voltage 40 V H 0.45_HJ 14.00 0.50+VCEO Col

 0.1. Size:352K  first silicon
 ftc8050h.pdf pdf_icon

FTC8050

SEMICONDUCTOR FTC8050HTECHNICAL DATA General Purpose Transistors NPN Silicon FEATURE 3 High current capacity in compact package. I C =1.5A. 1 Epitaxial planar type. 2 PNP complement: FTA8550HPb-Free Package is available. SOT23 COLLECTOR DEVICE MARKING AND ORDERING INFORMATION 3 Shipping Device Marking 1 FTC8050H 1FC 3000/Tape&Reel BASE 2 E

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: 2STR2230 | MJE5731A | INC6008AP1 | FJL4215RTU | 2SD2242A | SX3707 | 2SD189

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