MJE13003A PDF and Equivalents Search

 

MJE13003A Specs and Replacement

Type Designator: MJE13003A

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 1.1 W

Maximum Collector-Base Voltage |Vcb|: 700 V

Maximum Collector-Emitter Voltage |Vce|: 400 V

Maximum Emitter-Base Voltage |Veb|: 9 V

Maximum Collector Current |Ic max|: 1.5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 4 MHz

Forward Current Transfer Ratio (hFE), MIN: 9

Noise Figure, dB: -

Package: TO92

 MJE13003A Substitution

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MJE13003A datasheet

 ..1. Size:97K  first silicon

mje13003a.pdf pdf_icon

MJE13003A

SEMICONDUCTOR MJE13003A TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR SWITCHING REGULATOR APPLICATION. HIGH VOLTAGE AND HIGH SPEED B C SWITCHING APPLICATION. FEATURES Excellent Switching Times N DIM MILLIMETERS ton=1.1 S(Max.), tf=0.7 S(Max.), at IC=1.5A A 4 70 MAX E K B 4 80 MAX High Collector Voltage VCBO=700V. G C 3 70 MAX D D 0 45 E 1 00 F 1 27 G 0 85 H 0 45 _ ... See More ⇒

 ..2. Size:213K  inchange semiconductor

mje13003a.pdf pdf_icon

MJE13003A

isc Silicon NPN Power Transistor MJE13003A DESCRIPTION Collector Emitter Sustaining Voltage V = 400V(Min.) CEO(SUS) Collector Saturation Voltage V = 1.0(Max) @ I = 1.0A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in high-voltage, high-speed, power swit- ching in inductive circuit, they are p... See More ⇒

 6.1. Size:107K  onsemi

mje13003.pdf pdf_icon

MJE13003A

MJE13003 SWITCHMODEt Series NPN Silicon Power Transistor These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE applications http //onsemi.com such as Switching Regulators, Inverters, Motor Controls, Solenoid/Relay drivers and Deflection circuits. 1.5 AMPERES Feat... See More ⇒

 6.2. Size:107K  onsemi

mje13003g.pdf pdf_icon

MJE13003A

MJE13003 SWITCHMODEt Series NPN Silicon Power Transistor These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE applications http //onsemi.com such as Switching Regulators, Inverters, Motor Controls, Solenoid/Relay drivers and Deflection circuits. 1.5 AMPERES Feat... See More ⇒

Detailed specifications: FTD2118, FTD4240, FTD880, FTD882, FTD882D, FTD882F, MJD122I, MJE13002B, BC549, MJE13003I, MJE13003T, MJE13005T, MMBTA42F, MMBTA92F, MMBTH10Q, A966O, A966Y

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