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MMBTH10Q Specs and Replacement


   Type Designator: MMBTH10Q
   SMD Transistor Code: 3EQ
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.225 W
   Maximum Collector-Base Voltage |Vcb|: 30 V
   Maximum Collector-Emitter Voltage |Vce|: 25 V
   Maximum Emitter-Base Voltage |Veb|: 3 V
   Maximum Collector Current |Ic max|: 0.01 A
   Transition Frequency (ft): 650 MHz
   Collector Capacitance (Cc): 0.7 pF
   Forward Current Transfer Ratio (hFE), MIN: 120
   Noise Figure, dB: -
   Package: SOT23

 MMBTH10Q Transistor Equivalent Substitute - Cross-Reference Search

   

MMBTH10Q detailed specifications

 ..1. Size:239K  first silicon
mmbth10q.pdf pdf_icon

MMBTH10Q

SEMICONDUCTOR MMBTH10Q TECHNICAL DATA VHF/UHF Transistors We declare that the material of product compliance with RoHS requirements. Ordering Information Device Marking Shipping 3000/Tape&Reel MMBTH10Q 3EQ 3 MAXIMUM RATINGS 2 Rating Symbol Value Unit 1 Collector Emitter Voltage V CEO 25 V SOT 23 Collector Base Voltage V CBO 30 V Emitter Base Voltage V EBO 3.0 V COLLE... See More ⇒

 7.1. Size:88K  motorola
mmbth10lt1rev0d.pdf pdf_icon

MMBTH10Q

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBTH10LT1/D MMBTH10LT1 VHF/UHF Transistor COLLECTOR NPN Silicon Motorola Preferred Device 3 1 BASE 3 2 1 EMITTER 2 CASE 318-08, STYLE 6 SOT-23 (TO-236AB) MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage VCEO 25 Vdc Collector Base Voltage VCBO 30 Vdc Emitter Base Voltage VEBO 3.0 Vdc DEVI... See More ⇒

 7.2. Size:738K  fairchild semi
mmbth10 mpsh10.pdf pdf_icon

MMBTH10Q

MPSH10 MMBTH10 C E C TO-92 E B B SOT-23 Mark 3E NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers, with collector currents in the 100 A to 20 mA range in common emitter or common base mode of operations, and in low frequency drift, high output UHF oscillators. Sourced from Process 42. Absolute Maximum Ratings* TA = 25 C unless otherwise noted S... See More ⇒

 7.3. Size:45K  fairchild semi
mmbth10rg.pdf pdf_icon

MMBTH10Q

MMBTH10RG NPN RF Transistor C This device is designed for use in low noise UHF/VHF amplifiers, with collector currents in the 100 A to 20 mA range in common emitter or common base mode of operations, and in low frequency drift, high output UHF oscillators. E Sourced from process 42. SOT-23 B Mark 3E 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings* Ta=25 C un... See More ⇒

Detailed specifications: MJD122I , MJE13002B , MJE13003A , MJE13003I , MJE13003T , MJE13005T , MMBTA42F , MMBTA92F , 2SC2383 , A966O , A966Y , DDA124EK , DDA144EK , DDA114YK , DDA123JK , DDA114EK , DDA143TK .

Keywords - MMBTH10Q transistor specs

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