BU103T Specs and Replacement
Type Designator: BU103T
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.8 W
Maximum Collector-Base Voltage |Vcb|: 650 V
Maximum Collector-Emitter Voltage |Vce|: 400 V
Maximum Emitter-Base Voltage |Veb|: 9 V
Maximum Collector Current |Ic max|: 1.8 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 15
Package: TO92
BU103T Substitution
- BJT ⓘ Cross-Reference Search
BU103T datasheet
R DBU103T www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 1 1 1 APPLICATION 1 Fluorescent Lamp Electronic Ballast and Switch-mode power supplies 2 2 2 ... See More ⇒
R BU103AD www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 1 1 1 APPLICATION 1 Fluorescent Lamp Electronic Ballast and Switch-mode power supplies 2 2 2 ... See More ⇒
Detailed specifications: DDTA143TE, DDTA114TE, DDTA124TE, DDTA144TE, DDTA115TE, DDTA125TE, 2SD780A, 3DG3001A1-H, 2N5401, D4515, DDTC113TCA, DDTC123TCA, DDTC143TCA, DDTC114TCA, DDTC124TCA, DDTC144TCA, DDTC115TCA
Keywords - BU103T pdf specs
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