BU206DL Specs and Replacement
Type Designator: BU206DL
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.8 W
Maximum Collector-Base Voltage |Vcb|: 400 V
Maximum Collector-Emitter Voltage |Vce|: 200 V
Maximum Emitter-Base Voltage |Veb|: 9 V
Maximum Collector Current |Ic max|: 3.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 5 MHz
Forward Current Transfer Ratio (hFE), MIN: 15
Package: TO92
BU206DL Substitution
- BJT ⓘ Cross-Reference Search
BU206DL datasheet
R BU206DL www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 1 1 1 APPLICATION 1 Mainly used for 110V power Fluorescent Lamp Electronic Ballast etc 2 2 2 ... See More ⇒
Detailed specifications: BU103BD, BU103BH, BU103DH, BU13003D, BU13003F, BU202ADL, BU202DL, BU203DL, MJE350, BU3150AF, BU3150BF, BU3150F, BU3150F-A, BU3150T, BU5027A, BU5027AF, BU5027S
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History: BCY40 | 2SD151
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