DK53H Datasheet, Equivalent, Cross Reference Search
Type Designator: DK53H
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 30 W
Maximum Collector-Base Voltage |Vcb|: 800 V
Maximum Collector-Emitter Voltage |Vce|: 500 V
Maximum Emitter-Base Voltage |Veb|: 9 V
Maximum Collector Current |Ic max|: 1.6 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 5 MHz
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: TO251
DK53H Transistor Equivalent Substitute - Cross-Reference Search
DK53H Datasheet (PDF)
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dk53h.pdf
dk53h.pdf
RDK53H www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 111APPLICATION 1LED driveCharger and Switch-mode power supplies 222FEATURES 2 High vo
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