DK53H Specs and Replacement
Type Designator: DK53H
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 30 W
Maximum Collector-Base Voltage |Vcb|: 800 V
Maximum Collector-Emitter Voltage |Vce|: 500 V
Maximum Emitter-Base Voltage |Veb|: 9 V
Maximum Collector Current |Ic max|: 1.6 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 5 MHz
Forward Current Transfer Ratio (hFE), MIN: 20
Package: TO251
DK53H Substitution
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DK53H datasheet
R DK53H www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 1 1 1 APPLICATION 1 LED drive Charger and Switch-mode power supplies 2 2 2 FEATURES 2 High vo... See More ⇒
Detailed specifications: DBU103T , DK52 , DK52A , DK52D , DK53AD , DK53ADL , DK53D , DK53DL , BC337 , DK53TD , DK54DL , DK55A , DK55ED , DK55SD , E13005SDL , H13003 , H13003AD .
History: DK53TD
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History: DK53TD
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