S13005ED Datasheet. Specs and Replacement
Type Designator: S13005ED 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 30 W
Maximum Collector-Base Voltage |Vcb|: 700 V
Maximum Collector-Emitter Voltage |Vce|: 400 V
Maximum Emitter-Base Voltage |Veb|: 9 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 6 MHz
Forward Current Transfer Ratio (hFE), MIN: 15
Package: SOT82
S13005ED Substitution
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S13005ED datasheet
TS13005CK Taiwan Semiconductor High Voltage NPN Transistor FEATURES KEY PERFORMANCE PARAMETERS Low spread of dynamic parameters PARAMETER VALUE UNIT High switching speed BVCEO 400 V Low base drive requirement BVCBO 700 V Compliant to RoHS Directive 2011/65/EU and in IC 3 A accordance to WEEE 2002/96/EC. Halogen-free according to IEC 61249-2-21 VCE... See More ⇒
TS13005 High Voltage NPN Transistor TO-220 ITO-220 Pin Definition PRODUCT SUMMARY 1. Base BVCEO 400V 2. Collector 3. Emitter BVCBO 700V IC 4A VCE(SAT) 1V @ IC / IB = 4A / 1A Features Block Diagram High Voltage High Speed Switching Structure Silicon Triple Diffused Type NPN Silicon Transistor Ordering Information Part No. Package Packing ... See More ⇒
TS13005 High Voltage NPN Transistor TO-220 ITO-220 Pin Definition PRODUCT SUMMARY 1. Base BVCEO 400V 2. Collector 3. Emitter BVCBO 700V IC 4A VCE(SAT) 1V @ IC / IB = 4A / 1A Features Block Diagram High Voltage High Speed Switching Structure Silicon Triple Diffused Type NPN Silicon Transistor Ordering Information Part No. Package Packing ... See More ⇒
Detailed specifications: S13003, S13003A, S13003AD, S13003A-D, S13003AD-H, S13003ADL, S13003DL, S13005A, BD135, 3DD127_D3, 3DD127_D5, 3DD127D, 3DD128_A8D, 3DD128_Y8D, 3DD128F, 3DD128F_A7D, 3DD128F_H3D
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