3DD128F_H3D Datasheet. Specs and Replacement

Type Designator: 3DD128F_H3D  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 40 W

Maximum Collector-Base Voltage |Vcb|: 350 V

Maximum Collector-Emitter Voltage |Vce|: 200 V

Maximum Emitter-Base Voltage |Veb|: 9 V

Maximum Collector Current |Ic max|: 3.5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 4 MHz

Forward Current Transfer Ratio (hFE), MIN: 15

Noise Figure, dB: -

Package: TO251

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Detailed specifications: S13005ED, 3DD127_D3, 3DD127_D5, 3DD127D, 3DD128_A8D, 3DD128_Y8D, 3DD128F, 3DD128F_A7D, SS8050, 3DD128F_H5D, 3DD128F_H6D, 3DD128F_H8D, 3DD13001_A1, 3DD13002_B1, 3DD13002_B1-7, 3DD13002_RUD, 3DD13003_E6D

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