3DD13003_H8D Datasheet. Specs and Replacement

Type Designator: 3DD13003_H8D  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 60 W

Maximum Collector-Base Voltage |Vcb|: 600 V

Maximum Collector-Emitter Voltage |Vce|: 400 V

Maximum Emitter-Base Voltage |Veb|: 9 V

Maximum Collector Current |Ic max|: 1.8 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 5 MHz

Forward Current Transfer Ratio (hFE), MIN: 15

Noise Figure, dB: -

Package: TO220AB

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3DD13003_H8D datasheet

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3DD13003_H8D

3DD13003(NPN) TO-220 Transistor TO-220 1. BASE 2. COLLECTOR 3. EMITTER 3 2 1 Features power switching applications MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 700 V VCEO Collector-Emitter Voltage 400 V Dimensions in inches and (millimeters) VEBO Emitter-Base Voltage 9 V IC Collector Current -Continuou... See More ⇒

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Detailed specifications: 3DD13002_B1-7, 3DD13002_RUD, 3DD13003_E6D, 3DD13003_F1D, 3DD13003_F3D, 3DD13003_F6D, 3DD13003_H1D, 3DD13003_H6D, 2222A, 3DD13003_J6D, 3DD13003_J8D, 3DD13003_K6, 3DD13003_K8, 3DD13003_M6D, 3DD13003_M8D, 3DD13003_S1D, 3DD13003_SUD

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