3DD4513_A1D Datasheet, Equivalent, Cross Reference Search
Type Designator: 3DD4513_A1D
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.8 W
Maximum Collector-Base Voltage |Vcb|: 800 V
Maximum Collector-Emitter Voltage |Vce|: 450 V
Maximum Emitter-Base Voltage |Veb|: 9 V
Maximum Collector Current |Ic max|: 1.3 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 5 MHz
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: TO92
3DD4513_A1D Transistor Equivalent Substitute - Cross-Reference Search
3DD4513_A1D Datasheet (PDF)
3dd4513 a1d.pdf
NPN R 3DD4513 A1D 3DD4513 A1D NPN VCEO 450 V IC 1.3 A Ptot Ta=25 0.8 W
3dd4513 a6d.pdf
NPN R 3DD4513 A6D ` 3DD4513 A6D VCEO 450 V NPN IC 1.3 A Ptot TC=25 40 W
3dd4513a1d.pdf
NPN R 3DD4513 A1D 3DD4513 A1D NPN VCEO 450 V IC 1.3 A Ptot Ta=25 0.8 W
3dd4513a6d.pdf
NPN R 3DD4513 A6D ` 3DD4513 A6D VCEO 450 V NPN IC 1.3 A Ptot TC=25 40 W
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
History: MA116 | M54531FP | ESM3004
