BU406_A8 Datasheet, Equivalent, Cross Reference Search
Type Designator: BU406_A8
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 60 W
Maximum Collector-Base Voltage |Vcb|: 250 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 7 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 10 MHz
Forward Current Transfer Ratio (hFE), MIN: 50
Noise Figure, dB: -
Package: TO220
BU406_A8 Transistor Equivalent Substitute - Cross-Reference Search
BU406_A8 Datasheet (PDF)
bu406 bu407.pdf
Order this documentMOTOROLAby BU406/DSEMICONDUCTOR TECHNICAL DATABU406BU407NPN Power TransistorsThese devices are high voltage, high speed transistors for horizontal deflectionoutput stages of TVs and CRTs.7 AMPERESNPN SILICON High Voltage: VCEV = 330 or 400 VPOWER TRANSISTORS Fast Switching Speed: tf = 750 ns (max)
bu406 bu406h bu408 bu406 bu408.pdf
BU406/406H/408High Voltage Switching Use In Horizontal Deflection Output StageTO-22011.Base 2.Collector 3.EmitterNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage 400 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 6 V IC Collector Current (DC) 7 A ICP Co
bu406 bu406 bu406h bu408 sam.pdf
BU406/406H/408 NPN EPITAXIAL SILICON TRANSISTORHIGH VOLTAGE SWITCHINGTO-220USE IN HORIZONTAL DEFLECTIONOUTPUT STAGEABSOLUTE MAXIMUM RATINGSCharacteristic Symbol Rating Unit Collector-Base Voltage VCBO 400 V Collector-Emitter Voltage VCEO 200 V Emitter-Base Voltage VEBO 6 V Collector Current IC 7 A 1.Base 2.Collector 3.Emitter Collector Peck Current ICM 10 A Base Current
bu406 bu406tu.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
bu406 bu407.pdf
BU406, BU407NPN Power TransistorsThese devices are high voltage, high speed transistors for horizontaldeflection output stages of TVs and CRTs.Features High Voltagewww.onsemi.com Fast Switching Speed Low Saturation VoltageNPN SILICON These Devices are Pb-Free and are RoHS Compliant*POWER TRANSISTORS7 AMPERES - 60 WATTSMAXIMUM RATINGS150 AND 200 VOLT
bu406 bu407.pdf
Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN PLASTIC POWER TRANSISTORS BU406BU407TO-220Plastic PackageHorizontal Deflection Output Stages of TV and CRTABSOLUTE MAXIMUM RATINGS (Ta=25C)DESCRIPTION SYMBOL BU406 BU407 UNITCollector Emitter Voltage VCEO 200 150 VCollector Base Voltage VCBO 400 330 VVCEVCollector Emitter Volta
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
