NJM13003-1.63 Datasheet, Equivalent, Cross Reference Search
Type Designator: NJM13003-1.63
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 30 W
Maximum Collector-Base Voltage |Vcb|: 600 V
Maximum Collector-Emitter Voltage |Vce|: 400 V
Maximum Emitter-Base Voltage |Veb|: 9 V
Maximum Collector Current |Ic max|: 1.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 10
Noise Figure, dB: -
Package: TO126
NJM13003-1.63 Transistor Equivalent Substitute - Cross-Reference Search
NJM13003-1.63 Datasheet (PDF)
..1. Size:312K kexin
njm13003-1.63.pdf
njm13003-1.63.pdf
DIP Type TransistorsNPN TransistorsNJM13003-1.63TO-126Unit:mm8.00 0.30 3.25 0.20 Features High voltage capability3.20 0.10 High speed switching Wide SOA(1.00) (0.50)0.75 0.10 ROHS compliant1.75 0.201.60 0.100.75 0.10#1+0.102.28TYP 2.28TYP 0.50 0.05[2.280.20] [2.280.20]1. Base2. Collector3. Emitter Absol
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
