NJM13003-1.63 Specs and Replacement
Type Designator: NJM13003-1.63
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 30 W
Maximum Collector-Base Voltage |Vcb|: 600 V
Maximum Collector-Emitter Voltage |Vce|: 400 V
Maximum Emitter-Base Voltage |Veb|: 9 V
Maximum Collector Current |Ic max|: 1.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 10
Package: TO126
NJM13003-1.63 Substitution
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NJM13003-1.63 datasheet
DIP Type Transistors NPN Transistors NJM13003-1.63 TO-126 Unit mm 8.00 0.30 3.25 0.20 Features High voltage capability 3.20 0.10 High speed switching Wide SOA (1.00) (0.50) 0.75 0.10 ROHS compliant 1.75 0.20 1.60 0.10 0.75 0.10 #1 +0.10 2.28TYP 2.28TYP 0.50 0.05 [2.28 0.20] [2.28 0.20] 1. Base 2. Collector 3. Emitter Absol... See More ⇒
Detailed specifications: 3DD13003F, CXTA44, KSU13003H, KX2000N, KX2001P, MJD13001, MJD13002, MMBTA45, 2N3055, 2SA1385-Z, 2SA2071-Q, 2SB1070A, 2SB1169A, 2SB1172A, 2SB1571, 2SB1572, 2SB1628
Keywords - NJM13003-1.63 pdf specs
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History: MJE13003DI3 | MJE13003VI1
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