All Transistors. NJM13003-1.63 Datasheet

 

NJM13003-1.63 Datasheet and Replacement


   Type Designator: NJM13003-1.63
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 30 W
   Maximum Collector-Base Voltage |Vcb|: 600 V
   Maximum Collector-Emitter Voltage |Vce|: 400 V
   Maximum Emitter-Base Voltage |Veb|: 9 V
   Maximum Collector Current |Ic max|: 1.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 10
   Noise Figure, dB: -
   Package: TO126
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NJM13003-1.63 Datasheet (PDF)

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NJM13003-1.63

DIP Type TransistorsNPN TransistorsNJM13003-1.63TO-126Unit:mm8.00 0.30 3.25 0.20 Features High voltage capability3.20 0.10 High speed switching Wide SOA(1.00) (0.50)0.75 0.10 ROHS compliant1.75 0.201.60 0.100.75 0.10#1+0.102.28TYP 2.28TYP 0.50 0.05[2.280.20] [2.280.20]1. Base2. Collector3. Emitter Absol

Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2SD1047 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

Keywords - NJM13003-1.63 transistor datasheet

 NJM13003-1.63 cross reference
 NJM13003-1.63 equivalent finder
 NJM13003-1.63 lookup
 NJM13003-1.63 substitution
 NJM13003-1.63 replacement

 

 
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