All Transistors. 2SC5310 Datasheet

 

2SC5310 Datasheet, Equivalent, Cross Reference Search

Type Designator: 2SC5310

SMD Transistor Code: NN5_NN6

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 0.25 W

Maximum Collector-Base Voltage |Vcb|: 30 V

Maximum Collector-Emitter Voltage |Vce|: 25 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 1 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 150 MHz

Collector Capacitance (Cc): 19 pF

Forward Current Transfer Ratio (hFE), MIN: 135

Noise Figure, dB: -

Package: SOT23

2SC5310 Transistor Equivalent Substitute - Cross-Reference Search

 

2SC5310 Datasheet (PDF)

1.1. 2sc5310.pdf Size:44K _sanyo

2SC5310
2SC5310

Ordering number:ENN5613 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1973/2SC5310 DC/DC Converter Applications Features Package Dimensions Adoption of FBET, MBIT processes. unit:mm Large current capacitance. 2018B Low collector-to-emitter saturation voltage. [2SA1973/2SC5310] High-speed switching. 0.4 Ultrasmall package facilitates miniaturization in end 0.16 3 pro

1.2. 2sc5310.pdf Size:1137K _kexin

2SC5310
2SC5310

SMD Type Transistors NPN Transistors 2SC5310 SOT-23 Unit: mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 ■ Features ● Collector Current Capability IC=1A 1 2 ● Collector Emitter Voltage VCEO=25V +0.1 +0.05 0.95 -0.1 0.1 -0.01 ● Complement to 2SA1973 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Bas

4.1. 2sc5315.pdf Size:125K _toshiba

2SC5310
2SC5310

4.2. 2sc5319.pdf Size:169K _toshiba

2SC5310
2SC5310

2SC5319 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5319 VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure: NF = 1.3dB (f = 2 GHz) High gain: Ga = 11.5dB (f = 2 GHz) Maximum Ratings (Ta = = 25C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 8 V Collector-emitter voltage VCEO 5 V Emitter-base voltage VEBO 1.5 V Coll

4.3. 2sc5316.pdf Size:125K _toshiba

2SC5310
2SC5310

4.4. 2sc5317.pdf Size:121K _toshiba

2SC5310
2SC5310

2SC5317 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5317 VHF~UHF Band Low Noise Amplifier Applications Unit: mm (chip: fT = 16 GHz series) Low noise figure: NF = 1.3dB (f = 2 GHz) High gain: Ga = 9dB (f = 2 GHz) Maximum Ratings (Ta = = 25C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 8 V Collector-emitter voltage VCEO 5 V Emitter-bas

4.5. 2sc5318.pdf Size:126K _toshiba

2SC5310
2SC5310

4.6. 2sc5317ft.pdf Size:125K _toshiba

2SC5310
2SC5310

2SC5317FT TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5317FT VHF~UHF Band Low Noise Amplifier Applications Unit: mm (chip: fT = 16 GHz series) Low noise figure: NF = 1.3dB (f = 2 GHz) High gain: |S |2 = 9dB (f = 2 GHz) 21e Maximum Ratings (Ta = = 25C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 8 V Collector-emitter voltage VCEO 5 V

4.7. 2sc5315.pdf Size:353K _kexin

2SC5310

SMD Type Transistors NPN Transistors 2SC5315 SOT-23 Unit: mm 2.9+0.1 -0.1 +0.1 0.4-0.1 3 ■ Features ● Collector Current Capability IC=20mA ● Collector Emitter Voltage VCEO=5V 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 8 Collecto

Datasheet: 2SB1628 , 2SB772A , 2SB962-Z , 2SC3518-Z , 2SC3928A , 2SC4577 , 2SC4983 , 2SC5053 , BC549 , 2SC5344SF , 2SD1742A , 2SD2167 , 2SD2402 , 2SD882A , BC808A , BC818A , BC849W .

 


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