2N6557 PDF and Equivalents Search

 

2N6557 Specs and Replacement

Type Designator: 2N6557

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 2 W

Maximum Collector-Base Voltage |Vcb|: 250 V

Maximum Collector-Emitter Voltage |Vce|: 250 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 0.5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 45 MHz

Forward Current Transfer Ratio (hFE), MIN: 40

Noise Figure, dB: -

Package: TO202

 2N6557 Substitution

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2N6557 datasheet

 9.1. Size:49K  njs

2n6550.pdf pdf_icon

2N6557

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 9.2. Size:91K  central

2n6551 2n6552 2n6553 2n6554 2n6555 2n6556.pdf pdf_icon

2N6557

145 Adams Avenue, Hauppauge, NY 11788 USA Tel (631) 435-1110 Fax (631) 435-1824 ... See More ⇒

 9.3. Size:1355K  cn silicon billion

y2n655s.pdf pdf_icon

2N6557

Xiamen Silicon-top opto electronics Co.,Ltd. Y2N 655S 60V 10A N-Channel MOSFET Power MOSFET (2 IN 1) General Features Proprietary New Trench Technology Ultra-low Miller Charge RDS(ON),typ.=43m @VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode Applications High efficiency DC/DC Con... See More ⇒

Detailed specifications: 2N6549, 2N655, 2N6551, 2N6552, 2N6553, 2N6554, 2N6555, 2N6556, TIP35C, 2N6558, 2N6559, 2N656, 2N6560, 2N6561, 2N6562, 2N6563, 2N6566

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