All Transistors. 2N6557 Datasheet

 

2N6557 Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2N6557
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 2 W
   Maximum Collector-Base Voltage |Vcb|: 250 V
   Maximum Collector-Emitter Voltage |Vce|: 250 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 0.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 45 MHz
   Forward Current Transfer Ratio (hFE), MIN: 40
   Noise Figure, dB: -
   Package: TO202

 2N6557 Transistor Equivalent Substitute - Cross-Reference Search

   

2N6557 Datasheet (PDF)

 9.1. Size:49K  njs
 2n6550.pdf

2N6557

 9.2. Size:91K  central
 2n6551 2n6552 2n6553 2n6554 2n6555 2n6556.pdf

2N6557 2N6557

145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824

 9.3. Size:1355K  cn silicon billion
 y2n655s.pdf

2N6557 2N6557

Xiamen Silicon-top opto electronics Co.,Ltd.Y2N 655S60V 10A N-Channel MOSFET Power MOSFET (2 IN 1)General FeaturesProprietary New Trench TechnologyUltra-low Miller ChargeRDS(ON),typ.=43m@VGS=10VLow Gate Charge Minimize Switching LossFast Recovery Body DiodeApplicationsHigh efficiency DC/DC Con

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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