All Transistors. 2N3419S Datasheet

 

2N3419S Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2N3419S
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 5 W
   Maximum Collector-Base Voltage |Vcb|: 125 V
   Maximum Collector-Emitter Voltage |Vce|: 80 V
   Maximum Emitter-Base Voltage |Veb|: 8 V
   Maximum Collector Current |Ic max|: 3 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 160 MHz
   Collector Capacitance (Cc): 150 pF
   Forward Current Transfer Ratio (hFE), MIN: 10
   Noise Figure, dB: -
   Package: TO39 TO205AD

 2N3419S Transistor Equivalent Substitute - Cross-Reference Search

   

2N3419S Datasheet (PDF)

 8.1. Size:63K  microsemi
2n3419.pdf

2N3419S
2N3419S

7516 Central Industrial DriveRiviera Beach, Florida33404PHONE: (561) 842-0305FAX: (561) 845-78132N3419APPLICATIONS: Power Supply Pulse Amplifier High Frequency Power Switching3 Amp, 125V,FEATURES:NPN Silicon Power Meets MIL-S-19500/393Transistors Collector-Base Voltage: up to 125VJAN, JTX, JTXV, JANS Peak Collector Current: 5A High Power

 8.2. Size:167K  aeroflex
2n3418 2n3419 2n3420 2n3421.pdf

2N3419S
2N3419S

NPN Meduim Power Silicon Transistor2N3418, 2N3419, 2N3420 & 2N34212N3418S, 2N3419S, 2N3420S & 2N3421SFeatures Available in commercial, JAN, JANTX, JANTXV, JANSand JANSR 100K rads (Si) per MIL-PRF-19500/393 TO-5, TO-39 (TO-205AD) PackageMaximum Ratings 2N3418, S 2N3419, SRatings Symbol 2N3420, S 2N3421, S UnitsCollector - Emitter Voltage VCEO 60 80 VdcCollector - Base

 9.1. Size:304K  fairchild semi
2n3416 2n3417.pdf

2N3419S
2N3419S

2N34162N3417B TO-92CENPN General Purpose AmplifierThis device is designed for use as general purpose amplifiersand switches requiring collector currents to 300 mA. Sourcedfrom Process 10. See PN100A for characteristics.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 50 VVCBO Collector-Base Voltage 50 V

 9.2. Size:33K  fairchild semi
2n3415.pdf

2N3419S
2N3419S

2N3415B TO-92CENPN General Purpose AmplifierThis device is designed for use as general purpose amplifiersand switches requiring collector currents to 300 mA. Sourcedfrom Process 10. See PN100A for characteristics.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsV Collector-Emitter Voltage 25 VCEOV Collector-Base Voltage 25 VCBOV

 9.3. Size:58K  central
2n3414 2n3415 2n3416 2n3417 mps3414 mps3415 mps3416 mps3417.pdf

2N3419S

145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824

 9.4. Size:48K  microelectronics
2n3414.pdf

2N3419S

 9.5. Size:63K  microsemi
2n3418.pdf

2N3419S
2N3419S

7516 Central Industrial DriveRiviera Beach, Florida33404PHONE: (561) 842-0305FAX: (561) 845-78132N3418APPLICATIONS: Power Supply Pulse Amplifier High Frequency Power Switching3 Amp, 85V,FEATURES:NPN Silicon Power Meets MIL-S-19500/393Transistors Collector-Base Voltage: up to 85VJAN, JTX, JTXV, JANS Peak Collector Current: 5A High Power Di

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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