WT5651 Datasheet and Replacement

   Type Designator: WT5651
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 1250 W
   Maximum Collector-Emitter Voltage |Vce|: 750 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 150 A
   Max. Operating Junction Temperature (Tj): 140 °C
   Forward Current Transfer Ratio (hFE), MIN: 5.5
   Noise Figure, dB: -
   Package: DISK55
      - BJT Cross-Reference Search