All Transistors. 3CA1930I Datasheet

 

3CA1930I Datasheet and Replacement


   Type Designator: 3CA1930I
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 20 W
   Maximum Collector-Base Voltage |Vcb|: 180 V
   Maximum Collector-Emitter Voltage |Vce|: 180 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 2 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 200 MHz
   Collector Capacitance (Cc): 26 pF
   Forward Current Transfer Ratio (hFE), MIN: 50
   Noise Figure, dB: -
   Package: TO251
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3CA1930I Datasheet (PDF)

 ..1. Size:252K  lzg
 2sa1930i 3ca1930i.pdf pdf_icon

3CA1930I

2SA1930I(3CA1930I) PNP /SILICON PNP TRANSISTOR : Purpose: General power and driver stage amplifier applications. 2SC5171I(3DA5171I) Features: High f , complementary pair with 2SC5171I(3DA5171I). T/Absolute maximum ratings(Ta=25)

 7.1. Size:312K  lzg
 2sa1930 3ca1930.pdf pdf_icon

3CA1930I

2SA1930(3CA1930) PNP /SILICON PNP TRANSISTOR : Purpose: General power and driver stage amplifier applications. 2SC5171(3DA5171) Features: High f , complementary pair with 2SC5171(3DA5171). T/Absolute maximum ratings(Ta=25) Sym

 7.2. Size:248K  lzg
 2sa1930s 3ca1930s.pdf pdf_icon

3CA1930I

2SA1930S(3CA1930S) PNP /SILICON PNP TRANSISTOR : Purpose: General power and driver stage amplifier applications. 2SC5171S(3DA5171S) Features: High f , complementary pair with 2SC5171S(3DA5171S). T/Absolute maximum ratings(Ta=25)

 9.1. Size:116K  jiangsu
 3ca1943.pdf pdf_icon

3CA1930I

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-3P Plastic-Encapsulate Transistors TO 3P 3CA1943 TRANSISTOR (PNP) 1. BASE FEATURES 2. COLLECTOR High Breakdown Voltage General Purpose Switching and Amplification 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage -120 V VCEO Collector-Emitter

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History: BTD2444S3 | BUP53 | DMA56403 | 2N3221 | 2SC915 | BC413C | STC2100

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