SBW3320 Datasheet, Equivalent, Cross Reference Search
Type Designator: SBW3320
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 80 W
Maximum Collector-Base Voltage |Vcb|: 500 V
Maximum Collector-Emitter Voltage |Vce|: 400 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 15 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 4 MHz
Forward Current Transfer Ratio (hFE), MIN: 6
Noise Figure, dB: -
Package: TO3P
SBW3320 Transistor Equivalent Substitute - Cross-Reference Search
SBW3320 Datasheet (PDF)
0.1. Size:575K winsemi
sbw3320-3320w.pdf
sbw3320-3320w.pdf
SBW3320SBW3320SBW3320SBW3320High Voltage Fast-Switching NPN Power TransistorHigh Voltage Fast-Switching NPN Power TransistorHigh Voltage Fast-Switching NPN Power TransistorHigh Voltage Fast-Switching NPN Power TransistorFeatures Very High Switching Speed High Voltage Capability Wide Reverse Bias SOATO3PTO3PTO3PTO3PSBW3320SBW3320SBW3320SBW3320Gene
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: FA1A4Z
