All Transistors. STBV45D Datasheet

 

STBV45D Datasheet, Equivalent, Cross Reference Search


   Type Designator: STBV45D
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.95 W
   Maximum Collector-Base Voltage |Vcb|: 700 V
   Maximum Collector-Emitter Voltage |Vce|: 400 V
   Maximum Emitter-Base Voltage |Veb|: 9 V
   Maximum Collector Current |Ic max|: 0.75 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 5 MHz
   Forward Current Transfer Ratio (hFE), MIN: 10
   Noise Figure, dB: -
   Package: TO92

 STBV45D Transistor Equivalent Substitute - Cross-Reference Search

   

STBV45D Datasheet (PDF)

 ..1. Size:217K  foshan
stbv45d.pdf

STBV45D
STBV45D

STBV45D NPN /SILICON NPN TRANSISTOR : /Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. :,,/Features: High voltage capability,low spread of dynamic

 8.1. Size:185K  st
stbv45.pdf

STBV45D
STBV45D

STBV45High voltage fast-switching NPN power transistorFeatures High voltage capability Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speedApplications Compact fluorescent lamps (CFLs)TO-92 TO-92AP SMPS for battery chargerDescriptionFigure 1. Internal schematic diagramThe device is manufactured us

 9.1. Size:262K  st
stbv42.pdf

STBV45D
STBV45D

STBV42High voltage fast-switching NPN power transistorFeatures High voltage capability Low spread of dynamic parameters Very high switching speedApplications Compact fluorescent lamps (CFLs) SMPS for battery chargerTO-92 TO-92APDescriptionThe device is manufactured using high voltage multi epitaxial planar technology for high switching Figure 1. Internal

 9.2. Size:113K  st
stbv42d.pdf

STBV45D
STBV45D

STBV42DHigh voltage fast-switching NPN power transistorPreliminary dataFeatures High voltage capability Low spread of dynamic parameters Very high switching speed Integrated free-wheeling diodeApplication Compact fluorescent lamps (CFLs)TO-92DescriptionThe device is manufactured using high voltage multi epitaxial planar technology for high switching Fi

 9.3. Size:206K  foshan
stbv42d.pdf

STBV45D
STBV45D

STBV42D NPN /SILICON NPN TRANSISTOR : /Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. :,,/Features: High voltage capability, low spread of dynamic

Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

 

 
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