2N6571 Specs and Replacement
Type Designator: 2N6571
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 250 W
Maximum Collector-Base Voltage |Vcb|: 115 V
Maximum Collector-Emitter Voltage |Vce|: 105 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 40 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 1 MHz
Forward Current Transfer Ratio (hFE), MIN: 20
Package: TO3
2N6571 Substitution
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2N6571 datasheet
Order this document MOTOROLA by 2N6576/D SEMICONDUCTOR TECHNICAL DATA 2N6576 2N6577 NPN Silicon Power Darlington 2N6578 Transistors General purpose EpiBase power Darlington transistors, suitable for linear and switching applications. 15 AMPERE POWER TRANSISTORS Replacement for 2N3055 and Driver NPN SILICON High Gain Darlington Performance DARLINGTON Built in Dio... See More ⇒
145 Adams Avenue, Hauppauge, NY 11788 USA Tel (631) 435-1110 Fax (631) 435-1824 ... See More ⇒
2N6575 Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar NPN Device. 3 VCEO = 300V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 10A 12.70 (0.50) All Semelab hermetically sealed products can be processed in ... See More ⇒
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR TRANSISTOR 2N657 TO-39 Metal Can Package General Purpose Transistor. ABSOLUTE MAXIMUM RATINGS (Ta=25 C unless specified otherwise) DESCRIPTION SYMBOL VALUE UNITS VCEO Collector Emitter Voltage 100 V VCBO Collector Base Voltage 100 V VEBO Emitter Base Voltage 8.0 V IC Col... See More ⇒
Detailed specifications: 2N6563, 2N6566, 2N6567, 2N6569, 2N656A, 2N656S, 2N657, 2N6570, A1013, 2N6572, 2N6573, 2N6574, 2N6575, 2N6576, 2N6577, 2N6578, 2N6579
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History: 2N6462 | 2N6460 | 2N6459 | 2N658 | 2N672 | 2N6706 | 2N657S
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