RN1210 pdf Datasheet and Replacements, Transistor Equivalent Finder, Cross Reference

RN1210 Specs and Replacement

Type Designator: RN1210

Material of Transistor: Si

Polarity: Pre-Biased-NPN

Built in Bias Resistor R1 = 4.7 kOhm

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.3 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 250 MHz

Collector Capacitance (Cc): 3 pF

Forward Current Transfer Ratio (hFE), MIN: 120

Noise Figure, dB: -

Package: TO92

RN1210 Substitution

- BJT ⓘ Cross-Reference Search

RN1210 datasheet

..1. Size:275K toshiba

rn1210 rn1211.pdf pdf_icon

RN1210,RN1211 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1210,RN1211 Switching, Inverter Circuit, Interface Circuit Unit mm and Driver Circuit Applications With built-in bias resistors. Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN2210 and RN2211 Equivalent Circuit Absolute Maximum Ratings (Ta = ... See More ⇒

Detailed specifications: STA485A , STA406A , STA408A , STA412A , STA413A , STA421A , STA431A , STA434A , BC556 , RN1211 , RN2201 , RN2202 , RN2203 , RN2204 , RN2205 , RN2206 , 3DA1360 .