All Transistors. RN1210 Datasheet

 

RN1210 Datasheet and Replacement


   Type Designator: RN1210
   Material of Transistor: Si
   Polarity: Pre-Biased-NPN
   Built in Bias Resistor R1 = 4.7 kOhm
   Maximum Collector Power Dissipation (Pc): 0.3 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 250 MHz
   Collector Capacitance (Cc): 3 pF
   Forward Current Transfer Ratio (hFE), MIN: 120
   Noise Figure, dB: -
   Package: TO92
 

 RN1210 Substitution

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RN1210 Datasheet (PDF)

 ..1. Size:275K  toshiba
 rn1210 rn1211.pdf pdf_icon

RN1210

RN1210,RN1211 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1210,RN1211 Switching, Inverter Circuit, Interface Circuit Unit: mmand Driver Circuit Applications With built-in bias resistors. Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN2210 and RN2211 Equivalent Circuit Absolute Maximum Ratings (Ta =

Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , TIP42C , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

Keywords - RN1210 transistor datasheet

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