All Transistors. RN1210 Datasheet

 

RN1210 Datasheet, Equivalent, Cross Reference Search

Type Designator: RN1210

Material of Transistor: Si

Polarity: Pre-Biased-NPN

Built in Bias Resistor R1 = 4.7 kOhm

Maximum Collector Power Dissipation (Pc): 0.3 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 250 MHz

Collector Capacitance (Cc): 3 pF

Forward Current Transfer Ratio (hFE), MIN: 120

Noise Figure, dB: -

Package: TO92

RN1210 Transistor Equivalent Substitute - Cross-Reference Search

 

RN1210 Datasheet (PDF)

1.1. rn1210 rn1211.pdf Size:275K _toshiba2

RN1210
RN1210

RN1210,RN1211 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1210,RN1211 Switching, Inverter Circuit, Interface Circuit Unit: mm and Driver Circuit Applications With built-in bias resistors. Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN2210 and RN2211 Equivalent Circuit Absolute Maximum Ratings (Ta =

Datasheet: 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2N2219 , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 , 2SA1815-5 , 2SA182 , 2SA1822 , 2SA183 .

 

 
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