RN2201 Specs and Replacement
Type Designator: RN2201
Material of Transistor: Si
Polarity: Pre-Biased-PNP
Built in Bias Resistor R1 = 4.7 kOhm
Built in Bias Resistor R2 = 4.7 kOhm
Typical Resistor Ratio R1/R2 = 1
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 200 MHz
Collector Capacitance (Cc): 3 pF
Forward Current Transfer Ratio (hFE), MIN: 30
Package: TO92
RN2201 Substitution
- BJT ⓘ Cross-Reference Search
RN2201 datasheet
RN2201 RN2206 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2201,RN2202,RN2203 RN2204,RN2205,RN2206 Unit mm Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN1201 RN1206 Equivalent Circuit and Bias... See More ⇒
Detailed specifications: STA408A, STA412A, STA413A, STA421A, STA431A, STA434A, RN1210, RN1211, 2SD669, RN2202, RN2203, RN2204, RN2205, RN2206, 3DA1360, 3DA1360A, 3DA1383
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