RN2206 Datasheet, Equivalent, Cross Reference Search
Type Designator: RN2206
Material of Transistor: Si
Polarity: Pre-Biased-PNP
Built in Bias Resistor R1 = 4.7 kOhm
Built in Bias Resistor R2 = 47 kOhm
Typical Resistor Ratio R1/R2 = 0.1
Maximum Collector Power Dissipation (Pc): 0.3
W
Maximum Collector-Base Voltage |Vcb|: 50
V
Maximum Collector-Emitter Voltage |Vce|: 50
V
Maximum Emitter-Base Voltage |Veb|: 5
V
Maximum Collector Current |Ic max|: 0.1
A
Max. Operating Junction Temperature (Tj): 150
°C
Transition Frequency (ft): 200
MHz
Collector Capacitance (Cc): 3
pF
Forward Current Transfer Ratio (hFE), MIN: 80
Noise Figure, dB: -
Package: TO92
RN2206 Transistor Equivalent Substitute - Cross-Reference Search
RN2206 Datasheet (PDF)
rn2201-06.pdf
RN2201~RN2206 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2201,RN2202,RN2203 RN2204,RN2205,RN2206 Unit: mmSwitching, Inverter Circuit, Interface Circuit And Driver Circuit Applications With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN1201~RN1206 Equivalent Circuit and Bias
Datasheet: 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N3055 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .
History: 2SA1318R | JC560A | 2SA1370F | 2SA1272