3DA14 Specs and Replacement
Type Designator: 3DA14
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 5 W
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Transition Frequency (ft): 100 MHz
Forward Current Transfer Ratio (hFE), MIN: 10
Package: TO3
3DA14 Substitution
- BJT ⓘ Cross-Reference Search
3DA14 datasheet
Shaanxi Qunli Electric Co., Ltd Add. No. 1 Qunli Road,Baoji City,Shaanxi,China 3DA14, 3DA27, 3DA28 NPN Silicon High Frequency High Power Transistor Features 1. Excellent second breakdown capacity. Good characteristic frequency. 2. Amplification factor of small current is great. Good voltage resistance. 3. Implementation of standards GJB33 A-97, QZJ840611A, QZJ840611 4. Use for a... See More ⇒
TIP142T(3DA142T) NPN /SILICON NPN TRANSISTOR Purpose Linear and switching industrial equipment. - TIP147T(3CA147T) Features Monolithic construction with built in base-emitter shunt resistors High DC current gain complement to TIP147T(... See More ⇒
Detailed specifications: RN2203, RN2204, RN2205, RN2206, 3DA1360, 3DA1360A, 3DA1383, 3DA1384, MJE350, 3DA27, 3DA28, 3DA142T, 3DA3788, 3DA3790, 3DA3807, 3DA3834, 3DA3834F
Keywords - 3DA14 pdf specs
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History: 2N5226 | 2N5086 | 2STA1962 | 2SC2470 | 2SC2468 | 2SC2490 | 2SC5305
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