3DA5200A Datasheet, Equivalent, Cross Reference Search
Type Designator: 3DA5200A
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 50 W
Maximum Collector-Base Voltage |Vcb|: 200 V
Maximum Collector-Emitter Voltage |Vce|: 200 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 15 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 30 MHz
Forward Current Transfer Ratio (hFE), MIN: 55
Noise Figure, dB: -
Package: TO3P
3DA5200A Transistor Equivalent Substitute - Cross-Reference Search
3DA5200A Datasheet (PDF)
3da5200a.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-3P Plastic-Encapsulate Transistors TO 3P 3DA5200A TRANSISTOR (NPN) 1. BASE FEATURES 2. COLLECTOR High Breakdown Voltage High Current and Power Capacity 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 200
3da5200c.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-3P Plastic-Encapsulate Transistors TO 3P 3DA5200C TRANSISTOR (NPN) 1. BASE FEATURES 2. COLLECTOR High Breakdown Voltage High Current and Power Capacity 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120
3da5200b.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-3P Plastic-Encapsulate Transistors TO 3P 3DA5200B TRANSISTOR (NPN) 1. BASE FEATURES 2. COLLECTOR High Breakdown Voltage High Current and Power Capacity 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 160 V VCEO Collector-Emitter Voltage 160
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
