All Transistors. 3DA001B Datasheet

 

3DA001B Datasheet and Replacement


   Type Designator: 3DA001B
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 1 W
   Maximum Collector-Base Voltage |Vcb|: 55 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 4 V
   Maximum Collector Current |Ic max|: 0.15 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 300 MHz
   Forward Current Transfer Ratio (hFE), MIN: 15
   Noise Figure, dB: -
   Package: TO18
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3DA001B Datasheet (PDF)

 8.1. Size:122K  china
 3da001.pdf pdf_icon

3DA001B

3DA001 NPN A B PCM TC=25 1 W ICM 0.15 A Tjm 175 Tstg -55~150 VCE=10V Rth 150 /W IC=0.03A V(BR)CBO ICB=1mA 35 55 V V(BR)CEO ICE=1mA 30 50 V V(BR)EBO IEB=1mA 4.0 V ICBO VCB=20V 0.1 A ICEO VCE=20V 0.1 A IEBO VEB=4V 0.1

Datasheet: 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N5401 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .

History: KT208I | DRC9143X | BDY12B | UMH15N | 2SD1007HR | ED1602D | SFE245

Keywords - 3DA001B transistor datasheet

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