3DA030B Datasheet, Equivalent, Cross Reference Search
Type Designator: 3DA030B
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 30 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 30 MHz
Forward Current Transfer Ratio (hFE), MIN: 15
Noise Figure, dB: -
Package: TO276AB TO220 TO257
3DA030B Transistor Equivalent Substitute - Cross-Reference Search
3DA030B Datasheet (PDF)
8.1. Size:148K china
3da030.pdf
3da030.pdf
3DA030 NPN A B C D E F G PCM TC=25 30 W ICM 3 A Tjm 175 Tstg -55~150 VCE=10V Rth 5 /W IC=1A V(BR)CBO ICB=1mA 25 50 100 150 200 250 300 V V(BR)CEO ICE=1mA 25 50 100 150 200 250 300 V V(BR)EBO IEB=1mA 5.0 V ICBO VCB=20V
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: 2N79
