3DA3420 Specs and Replacement
Type Designator: 3DA3420
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 10 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 8 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 40 pF
Forward Current Transfer Ratio (hFE), MIN: 140
Package: TO126F TO225F
3DA3420 Substitution
- BJT ⓘ Cross-Reference Search
3DA3420 datasheet
2SC3420(3DA3420) NPN /SILICON NPN TRANSISTOR , Purpose Storobo flash applications, medium power amplifier applications. , , Features High DC current gain, low saturation voltage high collector power dissipation. /Absolute ma... See More ⇒
2SC3421(3DA3421) NPN /SILICON NPN TRANSISTOR Purpose Audio frequency power amplifier applications. V 60-80W 2SA1358 3CA1358 CEO Features High V ,suitable for driver of 60 to 80 watts audio amplifier, complementary CEO to 2SA1358(3CA1358). /Absolute ... See More ⇒
2SC3422(3DA3422) NPN /SILICON NPN TRANSISTOR Purpose Audio frequency power amplifier, low speed switching. 5W h 2SA1359(3CA1359) FE Features Suitable for output stage of 5 watts car radio and car stereo, good linearity of h , FE compleme... See More ⇒
3DA340 NPN PCM TC=25 15 W ICM 0.5 A Tjm 150 Tstg -55 150 V(BR)CBO ICB=0.1mA 300 V V(BR)CEO ICE=0.1mA 300 V V(BR)EBO IEB=0.1mA 3.0 V ICBO VCB=300V 0.1 mA IEBO VEB=3V 0.1 mA IC=100mA VCEsat 1.0 V IB=10mA VCE=10V hFE 30 240 IC=... See More ⇒
Detailed specifications: 3DA030G, 3DA2073, 3DA2073A, 3DA2275, 3DA2275A, 3DA2344, 3DA340, 3DA3417, A733, 3DA3421, 3DA3422, 3DA3502, 3DA1, 3DA2, 3DA4, 3DA10A, 3DA10B
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