All Transistors. 3DA3422 Datasheet

 

3DA3422 Datasheet and Replacement


   Type Designator: 3DA3422
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 10 W
   Maximum Collector-Base Voltage |Vcb|: 40 V
   Maximum Collector-Emitter Voltage |Vce|: 40 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 3 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 100 MHz
   Collector Capacitance (Cc): 35 pF
   Forward Current Transfer Ratio (hFE), MIN: 80
   Noise Figure, dB: -
   Package: TO126F TO225F
 

 3DA3422 Substitution

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3DA3422 Datasheet (PDF)

 ..1. Size:149K  foshan
 2sc3422 3da3422.pdf pdf_icon

3DA3422

2SC3422(3DA3422) NPN /SILICON NPN TRANSISTOR Purpose: Audio frequency power amplifier, low speed switching. 5W h 2SA1359(3CA1359) FEFeatures: Suitable for output stage of 5 watts car radio and car stereo, good linearity of h , FE compleme

 8.1. Size:292K  foshan
 2sc3421 3da3421.pdf pdf_icon

3DA3422

2SC3421(3DA3421) NPN /SILICON NPN TRANSISTOR : Purpose: Audio frequency power amplifier applications. : V 60-80W 2SA13583CA1358 CEO Features: High V ,suitable for driver of 60 to 80 watts audio amplifier, complementary CEOto 2SA1358(3CA1358). /Absolute

 8.2. Size:168K  foshan
 2sc3420 3da3420.pdf pdf_icon

3DA3422

2SC3420(3DA3420) NPN /SILICON NPN TRANSISTOR :, Purpose: Storobo flash applications, medium power amplifier applications. :,, Features: High DC current gain, low saturation voltagehigh collector power dissipation. /Absolute ma

 9.1. Size:112K  china
 3da340.pdf pdf_icon

3DA3422

3DA340 NPN PCM TC=25 15 W ICM 0.5 A Tjm 150 Tstg -55~150 V(BR)CBO ICB=0.1mA 300 V V(BR)CEO ICE=0.1mA 300 V V(BR)EBO IEB=0.1mA 3.0 V ICBO VCB=300V 0.1 mA IEBO VEB=3V 0.1 mA IC=100mA VCEsat 1.0 V IB=10mA VCE=10V hFE 30~240 IC=

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Keywords - 3DA3422 transistor datasheet

 3DA3422 cross reference
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