3DA10B PDF and Equivalents Search

 

3DA10B PDF Specs and Replacement


   Type Designator: 3DA10B
   Material of Transistor: Si
   Polarity: NPN

Absolute Maximum Ratings


   Maximum Collector Power Dissipation (Pc): 10 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 4 V
   Maximum Collector Current |Ic max|: 1 A
   Max. Operating Junction Temperature (Tj): 175 °C

Electrical Characteristics


   Transition Frequency (ft): 30 MHz
   Forward Current Transfer Ratio (hFE), MIN: 15
   Noise Figure, dB: -
   Package: TO3
 

 3DA10B Substitution

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3DA10B PDF detailed specifications

 9.1. Size:134K  china
 3da100.pdf pdf_icon

3DA10B

3DA100 NPN A B C D E PCM TC=25 100 W ICM 10 A Tjm 175 Tstg -55 150 VCE=10V Rth 1.5 /W IC=3A V(BR)CBO ICB=1mA 25 50 100 150 200 V V(BR)CEO ICE=1mA 25 50 100 150 200 V V(BR)EBO IEB=1mA 5.0 V ICBO VCB=20V 1.0 mA ICEO VCE=20V... See More ⇒

 9.2. Size:29K  shaanxi
 3da101 3da102.pdf pdf_icon

3DA10B

Shaanxi Qunli Electric Co., Ltd Add. No. 1 Qunli Road,Baoji City,Shaanxi,China 3DA101, 3DA102 NPN Silicon High Frequency High Power Transistor Features 1. Excellent second breakdown capacity. Good characteristic frequency. 2. Amplification factor of small current is great. Good voltage resistance. 3. Implementation of standards GJB33 A-97, QZJ840611A, QZJ840611 4. Use for analog... See More ⇒

 9.3. Size:31K  shaanxi
 3da76 3da10a 3da96.pdf pdf_icon

3DA10B

Shaanxi Qunli Electric Co., Ltd Add. No. 1 Qunli Road,Baoji City,Shaanxi,China 3DA76, 3DA10A, 3DA96 NPN Silicon High Frequency High Power Transistor Features 1. Excellent second breakdown capacity. Good characteristic frequency. 2. Amplification factor of small current is great. Good voltage resistance. 3. Implementation of standards QZJ840611. GJB33 A-97, QZJ840611A also for 3DA9... See More ⇒

 9.4. Size:25K  shaanxi
 3da10.pdf pdf_icon

3DA10B

Shaanxi Qunli Electric Co., Ltd Add. No. 1 Qunli Road,Baoji City,Shaanxi,China 3DA10 NPN Silicon High Frequency High Power Transistor Features 1. Excellent second breakdown capacity. Good characteristic frequency. 2. Amplification factor of small current is great. Good voltage resistance. 3. Implementation of standards GJB33 A-97, QZJ840611A, QZJ840611 4. Use for analog computer ... See More ⇒

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Detailed specifications: 3DA3420 , 3DA3421 , 3DA3422 , 3DA3502 , 3DA1 , 3DA2 , 3DA4 , 3DA10A , 2SA1837 , 3DA10C , 3DA10D , 3DA10E , 3DA10F , 3DA10G , 3DA100A , 3DA100B , 3DA100C .

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