2N6581 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2N6581
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 125 W
Maximum Collector-Base Voltage |Vcb|: 550 V
Maximum Collector-Emitter Voltage |Vce|: 450 V
Maximum Emitter-Base Voltage |Veb|: 9 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 25 MHz
Collector Capacitance (Cc): 250 pF
Forward Current Transfer Ratio (hFE), MIN: 7
Noise Figure, dB: -
Package: TO3
2N6581 Transistor Equivalent Substitute - Cross-Reference Search
2N6581 Datasheet (PDF)
2n6581.pdf
2N6581Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar NPN Device. 3VCEO = 450V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 10A 12.70 (0.50) All Semelab hermetically sealed products can be processed in
2n6583.pdf
2N6583Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar NPN Device. 3VCEO = 400V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 10A 12.70 (0.50) All Semelab hermetically sealed products can be processed in
2n6583.pdf
isc Silicon NPN Power Transistor 2N6583DESCRIPTIONExcellent Safe Operating AreaCollector-Emitter Sustaining Voltage-: V = 400V(Min)CEO(SUS)High Current CapabilityCollector-Emitter Saturation Voltage-: V )= 1.5 V(Max)@ I = 10ACE(sat CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for linear amplifiers, s
2n6584.pdf
isc Silicon NPN Power Transistor 2N6584DESCRIPTIONExcellent Safe Operating AreaCollector-Emitter Sustaining Voltage-: V = 450V(Min)CEO(SUS)High Current CapabilityCollector-Emitter Saturation Voltage-: V )= 1.5 V(Max)@ I = 10ACE(sat CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for linear amplifiers, s
2n6582.pdf
isc Silicon NPN Power Transistor 2N6582DESCRIPTIONExcellent Safe Operating AreaCollector-Emitter Sustaining Voltage-: V = 350V(Min)CEO(SUS)High Current CapabilityCollector-Emitter Saturation Voltage-: V )= 1.5 V(Max)@ I = 10ACE(sat CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for linear amplifiers, s
Datasheet: 2N6576 , 2N6577 , 2N6578 , 2N6579 , 2N657A , 2N657S , 2N658 , 2N6580 , TIP2955 , 2N6582 , 2N6583 , 2N6584 , 2N6585 , 2N6586 , 2N6587 , 2N6588 , 2N6589 .
