3DA3279 Specs and Replacement
Type Designator: 3DA3279
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.75 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 10 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 2 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 150 MHz
Collector Capacitance (Cc): 27 pF
Forward Current Transfer Ratio (hFE), MIN: 70
Package: TO92
3DA3279 Substitution
- BJT ⓘ Cross-Reference Search
3DA3279 datasheet
2SC3279(3DA3279) NPN /SILICON NPN TRANSISTOR Purpose Medium power amplifier applications. Features High DC current gain and excellent h linearity, low saturation voltage. FE /Absolute maximum ratings(Ta=25 ) Symbol... See More ⇒
3DA325(2SD325) NPN PCM TC=25 1.75 W ICM 1.5 A Tjm 150 Tstg -55 150 VCE=10V Rth 71 /W IC=0.3A V(BR)CBO ICB=1mA 35 V V(BR)CEO ICE=1mA 35 V V(BR)EBO IEB=1mA 5.0 V ICBO VCB=20V 0.1 A IEBO VCE=5.0V 1.0 A VBEsat 1.5 IC=1.5A V IB... See More ⇒
Detailed specifications: 3DA150G, 3DA1573, 3DA1573A, 3DA1846, 3DA314, 3DA3150, 3DA3209, 3DA325, BC547B, 3DA3866, 3DA8A, 3DA8B, 3DA8C, 3DA8D, 3DA8E, 3DA80A, 3DA80B
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