2N6340X Specs and Replacement
Type Designator: 2N6340X
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 200 W
Maximum Collector-Emitter Voltage |Vce|: 140 V
Maximum Collector Current |Ic max|: 25 A
Electrical Characteristics
Transition Frequency (ft): 40 MHz
Forward Current Transfer Ratio (hFE), MIN: 30
Package: TO3
2N6340X Substitution
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2N6340X datasheet
2N6340X Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar NPN Device. 3 VCEO = 140V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 25A 12.70 (0.50) All Semelab hermetically sealed products can be processed in... See More ⇒
2n6338 2n6339 2n6340 2n6341.pdf ![]()
Order this document MOTOROLA by 2N6338/D SEMICONDUCTOR TECHNICAL DATA High-Power NPN Silicon 2N6338 Transistors 2N6339 . . . designed for use in industrial military power amplifier and switching circuit 2N6340 applications. High Collector Emitter Sustaining Voltage 2N6341* VCEO(sus) = 100 Vdc (Min) 2N6338 VCEO(sus) = 120 Vdc (Min) 2N6339 *Motorola Preferred De... See More ⇒
2n6338 2n6339 2n6340 2n6341.pdf ![]()
JMnic Product Specification Silicon NPN Power Transistors 2N6338 2N6339 2N6340 2N6341 DESCRIPTION With TO-3 package High DC current gain Fast switching times Low collector saturation voltage Complement to type 2N6436 38 APPLICATIONS For use in industrial-military power amplifier and switching circuit applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base ... See More ⇒
Detailed specifications: 2N6308T1, 2N6308T3, 2N916CSM, 2N916DCSM, 2N918ADCSM, 2N918DCSM, 2N930UB, 2N6338X, TIP42, 2N6341X, 2N6385SMD05, 2N6517M, 3CG6517M, 2N6546T1, 2N6546T3, 2N6547T1, 2N6547T3
Keywords - 2N6340X pdf specs
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