2STW200 Specs and Replacement
Type Designator: 2STW200
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 130 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Collector Current |Ic max|: 25 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 300
Package: TO247
2STW200 Substitution
- BJT ⓘ Cross-Reference Search
2STW200 datasheet
2STW100 2STW200 Complementary power Darlington transistors Preliminary data Features Complementary NPN - PNP transistors Monolithic Darlington configuration Applications Audio power amplifier DC-AC converter 3 2 1 Low voltage DC motor drive General purpose switching applications TO-247 Description Figure 1. Internal schematic diagrams The devices are man... See More ⇒
INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor 2STW200 DESCRIPTION With TO-3PN packaging Very high DC current gain Monolithic darlington transistor with integrated antiparallel collector-emitter diode Complement to Type 2STW100 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS AC-DC motor control Electro... See More ⇒
Detailed specifications: 2STBN15D100, 2STD1360, 2STD2360, 2STF1525, 2STF2280, 2STL1525, 2STN2340, 2STW100, 431, 2SD2474, 2SD2625V9, BR3DD2625V9P, 2SD2625X9, BR3DD2625X9P, 2SD2625Z9, BR3DD2625Z9P, 2SD2656FRA
Keywords - 2STW200 pdf specs
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History: S8050LT1
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