2N6593 Datasheet and Replacement
Type Designator: 2N6593
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 2 W
Maximum Collector-Base Voltage |Vcb|: 250 V
Maximum Collector-Emitter Voltage |Vce|: 250 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 70 MHz
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB: -
Package: TO202
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2N6593 Datasheet (PDF)
2n6494 2n6594.pdf

ABoca Semiconductor Corp http://www.bocasemi.comABoca Semiconductor Corp BSC http://www.bocasemi.comABoca Semiconductor Corp BSC http://www.bocasemi.com
2n6594.pdf

JMnic Product Specification Silicon PNP Power Transistors 2N6594 DESCRIPTION With TO-3 package Complement to type 2N6569 Wide area of safe operation APPLICATIONS Designed for low voltage amplifier power switching applications PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorAbsolute maximum ratings(Ta=) SYMBOL
2n6594.pdf

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N6594 DESCRIPTION With TO-3 package Complement to type 2N6569 Wide area of safe operation APPLICATIONS Designed for low voltage amplifier power switching applications PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorAbsolute maximum ratings
Datasheet: 2N6586 , 2N6587 , 2N6588 , 2N6589 , 2N659 , 2N6590 , 2N6591 , 2N6592 , MPSA42 , 2N6594 , 2N6595 , 2N6596 , 2N6597 , 2N6598 , 2N6599 , 2N66 , 2N660 .
History: DMJT9435 | 2N249 | 2N5031 | 2SC3298A | 2SA982 | 2SA416 | 2SD696A
Keywords - 2N6593 transistor datasheet
2N6593 cross reference
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History: DMJT9435 | 2N249 | 2N5031 | 2SC3298A | 2SA982 | 2SA416 | 2SD696A



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