2SD992-Z Specs and Replacement
Type Designator: 2SD992-Z
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 2 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 2 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 35
Noise Figure, dB: -
Package: TO252
- BJT ⓘ Cross-Reference Search
2SD992-Z datasheet
..1. Size:122K tysemi
2sd992-z.pdf 
SMD Type SMD Type SMD Type SMD Type SMD Type IC SMD Type IC SMD Type IC SMD Type IC SMD Type Transistors SMD Type Transistors SMD Type Transistors SMD Type Transistors Product specification 2SD992-Z TO-252 Unit mm +0.15 +0.1 Features 6.50-0.15 2.30-0.1 +0.2 +0.8 5.30-0.2 0.50-0.7 Low VCE(sat). 0.127 +0.1 max 0.80-0.1 +0.1 2.3 0.60-0.1 1 Base +0.15 4.60-0.15 2 Coll... See More ⇒
9.5. Size:337K htsemi
2sd999.pdf
2SD999 TRANSISTOR (NPN) SOT-89-3L FEATURES Low Collector-Emitter Saturation Voltage 1. BASE Mini Power Type Package 2. COLLECTOR Excellent DC Current Gain Linearity 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collec... See More ⇒
9.6. Size:1169K kexin
2sd999.pdf
SMD Type Transistors NPN Transistors 2SD999 SOT-89 Unit mm 1.70 0.1 Features Collector Current Capability IC=1A Collector Emitter Voltage VCEO=25V 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collector - Emitter Voltage VCEO 25 V Emitter - Base Voltage VEBO ... See More ⇒
9.7. Size:548K cn sptech
2sd998.pdf
SPTECH Product Specification SPTECH Silicon NPN Power Transistor 2SD998 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 50V(Min) (BR)CEO Low Collector Saturation Voltage- V = 0.5V(Max)@ I = 5A CE(sat) C APPLICATIONS Designed for DC-DC converter, emergency lighting inverter and general purpose applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE U... See More ⇒
9.8. Size:205K inchange semiconductor
2sd993.pdf
isc Silicon NPN Power Transistor 2SD993 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO Collector-Emitter Saturation Voltage- V = 10V(Max.)@ I = 2.5A CE(sat) C Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =... See More ⇒
9.9. Size:210K inchange semiconductor
2sd998.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD998 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 120V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SB778 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High power amplifier applications Recommend for 45-50W audio frequency amplifier output st... See More ⇒
Detailed specifications: 2SD882GP, 2SD882-GR, 2SD882-O, 2SD882-R, 2SD882-Y, 2SD882ZGP, 2SD965K, 2SD965-Q, S9014, 2SC1740S-Q, 2SC1740S-R, 2SC1740S-S, 2SC1741S, 2SC1766GP, 2SC1815-BL, 2SC1815-GR, 2SC1815LT1
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