2N6597 Specs and Replacement
Type Designator: 2N6597
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 15 V
Maximum Collector-Emitter Voltage |Vce|: 12 V
Maximum Emitter-Base Voltage |Veb|: 2 V
Maximum Collector Current |Ic max|: 0.035 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 3500 MHz
Collector Capacitance (Cc): 1.1 pF
Forward Current Transfer Ratio (hFE), MIN: 25
Package: TO33-1
2N6597 Substitution
- BJT ⓘ Cross-Reference Search
2N6597 datasheet
A Boca Semiconductor Corp http //www.bocasemi.com A Boca Semiconductor Corp BSC http //www.bocasemi.com A Boca Semiconductor Corp BSC http //www.bocasemi.com ... See More ⇒
JMnic Product Specification Silicon PNP Power Transistors 2N6594 DESCRIPTION With TO-3 package Complement to type 2N6569 Wide area of safe operation APPLICATIONS Designed for low voltage amplifier power switching applications PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta= ) SYMBOL... See More ⇒
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N6594 DESCRIPTION With TO-3 package Complement to type 2N6569 Wide area of safe operation APPLICATIONS Designed for low voltage amplifier power switching applications PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings... See More ⇒
Detailed specifications: 2N659, 2N6590, 2N6591, 2N6592, 2N6593, 2N6594, 2N6595, 2N6596, D882P, 2N6598, 2N6599, 2N66, 2N660, 2N6600, 2N6601, 2N6602, 2N6603
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