2SC1815-Y Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SC1815-Y
SMD Transistor Code: C1815
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.4 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.15 A
Max. Operating Junction Temperature (Tj): 125 °C
Transition Frequency (ft): 80 MHz
Collector Capacitance (Cc): 3.5 pF
Forward Current Transfer Ratio (hFE), MIN: 120
Noise Figure, dB: -
Package: TO92
2SC1815-Y Transistor Equivalent Substitute - Cross-Reference Search
2SC1815-Y Datasheet (PDF)
2sc1815-o 2sc1815-y 2sc1815-gr 2sc1815-bl.pdf
2SC1815 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC1815 Audio Frequency General Purpose Amplifier Applications Unit: mmDriver Stage Amplifier Applications High voltage and high current: VCEO = 50 V (min), IC = 150 mA (max) Excellent hFE linearity: hFE (2) = 100 (typ.) at VCE = 6 V, IC = 150 mA : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.)
2sc1815-bl-gr-o-y.pdf
2SC1815-OMCC2SC1815-YMicro Commercial ComponentsTM20736 Marilla Street ChatsworthMicro Commercial Components2SC1815-GRCA 91311Phone: (818) 701-49332SC1815-BLFax: (818) 701-4939Features 2SC1815 is NPN Silicon Epitaxial Transistor Designed for RF, AF NPN SiliconAmplifier and General Purpose Applications. Capable of 0.4Watts of Power Dissipation.Epitaxial
2sc1815-ms.pdf
www.msksemi.com2SC1815-MSSemiconductor CompianceSemiconductor Compiance TRANSISTOR (NPN)FEATURES Power dissipation 1. BASEMARKING : HF 2. EMITTERSOT23 3. COLLECTORMAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage 60 V CBOVCEO Collector-Emitter Voltage 50 V V Emitter-Base Voltage 5 V EBOI Collector Cur
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
