PZTA45 Datasheet, Equivalent, Cross Reference Search

UNISONIC TECHNOLOGIES CO., LTD PZTA44/45 NPN SILICON TRANSISTOR NPN HIGH VOLTAGE TRANSISTOR FEATURES * Collector-emitter voltage: V =400V(PZTA44) CEO V =350V(PZTA45) CEO* Collector current up to 300mA APPLICATION * Telephone switching * High voltage switch ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby PZTA42T1/DHigh Voltage TransistorPZTA42T1Surface MountMotorola Preferred DeviceNPN SiliconCOLLECTOR 2,4SOT223 PACKAGENPN SILICONBASEHIGH VOLTAGE1TRANSISTORSURFACE MOUNTEMITTER 3MAXIMUM RATINGS4Rating Symbol Value Unit1Collector-Emitter Voltage (Open Base) VCEO 300 Vdc23Collector-Base V

DISCRETE SEMICONDUCTORS DATA SHEETdbook, halfpageM3D087PZTA44NPN high-voltage transistorProduct data sheet 1999 May 21Supersedes data of 1998 Nov 26 NXP Semiconductors Product data sheetNPN high-voltage transistor PZTA44FEATURES PINNING Low current (max. 300 mA)PIN DESCRIPTION High voltage (max. 400 V).1 base2, 4 collectorAPPLICATIONS3 emitter Tel

DISCRETE SEMICONDUCTORS DATA SHEETdbook, halfpageM3D087PZTA42NPN high-voltage transistorProduct data sheet 1999 May 21Supersedes data of 1997 Jun 16 NXP Semiconductors Product data sheetNPN high-voltage transistor PZTA42FEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION High voltage (max. 300 V).1 base2,4 collectorAPPLICATIONS3 emitter Tele

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D087PZTA42NPN high-voltage transistor1999 May 21Product specificationSupersedes data of 1997 Jun 16Philips Semiconductors Product specificationNPN high-voltage transistor PZTA42FEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION High voltage (max. 300 V).1 base2,4 collectorAPPLICATIONS3 emitter

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D087PZTA44NPN high-voltage transistor1999 May 21Product specificationSupersedes data of 1998 Nov 26Philips Semiconductors Product specificationNPN high-voltage transistor PZTA44FEATURES PINNING Low current (max. 300 mA)PIN DESCRIPTION High voltage (max. 400 V).1 base2, 4 collectorAPPLICATIONS3 emitter

October 2009MPSA42 / MMBTA42 / PZTA42NPN High Voltage AmplifierFeatures This device is designed for application as a video output to drive color CRT and other high voltage applications. Sourced from Process 48. MPSA42 MMBTA42 PZTA42CCE E C BB SOT-23TO-92SOT-223Mark: 1DE B CAbsolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Valu

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

NPN Silicon High-Voltage Transistors PZTA 42PZTA 43 High breakdown voltage Low collector-emitter saturation voltage Complementary types: PZTA 92, PZTA 93 (PNP)Type Marking Ordering Code Pin Configuration Package1)(tape and reel) 1 2 3 4PZTA 42 PZTA 42 Q62702-Z2035 B C E C SOT-223PZTA 43 PZTA 43 Q62702-Z2036Maximum RatingsParameter Symbol Values UnitPZTA 42 PZTA 43Collect

PZTA42NPN Silicon High-Voltage Transistors High breakdown voltage43 Low collector-emitter saturation voltage21 Complementary type: PZTA92 (PNP) Pb-free (RoHS compliant) package Qualified according AEC Q101Type Marking Pin Configuration PackagePZTA42 PZTA421=B 2=C 3=E 4=C - - SOT223Maximum RatingsParameter Symbol Value Unit300 VCollector-emitter v

PZTA44Features High Voltage Driver Application Halogen Free. Green Device (Note 1)NPN Moisture Sensitivity Level 1 Epoxy Meets UL 94 V-0 Flammability RatingPlastic Encapsulate Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS TransistorsCompliant. See Ordering Information) Maximum Ratings @ 25C Unless Otherwise Specified Operating Ju

PZTA42T1GHigh Voltage TransistorSurface MountNPN Siliconwww.onsemi.comFeatures PZTA42T1G is Complement to PZTA92T1GSOT-223 PACKAGE S Prefix for Automotive and Other Applications Requiring UniqueNPN SILICONSite and Control Change Requirements; AEC-Q101 Qualified andPPAP CapableHIGH VOLTAGE TRANSISTOR These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS

PZTA42T1High Voltage TransistorSurface MountNPN Siliconhttp://onsemi.comFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSSOT-223 PACKAGECompliantNPN SILICONHIGH VOLTAGE TRANSISTORMAXIMUM RATINGS (TC = 25C unless otherwise noted)SURFACE MOUNTRating Symbol Value UnitCollector-Emitter Voltage VCEO 300 Vdc(Open Base)COLLECTOR 2, 4Collector

UNISONIC TECHNOLOGIES CO., LTD PZTA42/43 NPN SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR DESCRIPTION The UTC PZTA42/43 are high voltage transistors, designed for telephone switch and high voltage switch. FEATURES * Collector-emitter voltage: VCEO=300V (UTC PZTA42) 1 VCEO=200V (UTC PZTA43) SOT-223* High current gain * Complement to UTC PZTA92/93 * Collector power dis

PZTA42NPN Transistor Elektronische BauelementeEpitaxial Planar TransistorRoHS Compliant ProductSOT-223Description The PZTA42 is designed for application as a video output to drive color CRT, or as dialer circuit in electronics telephone.MillimeterMillimeter REF. REF. A 4 2 Min. Max. Min. Max. Date CodeA 6.70 7.30 B 13 TYP. C 2.90 3.10 J 2.30 REF. B C E D 0.02

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON PLANAR EPITAXIAL TRANSISTOR PZTA44SOT-223Formed SMD PackageHigh Voltage TransistorABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNITSCollector Base Voltage VCBO 500 VVCEOCollector Emitter Voltage 400 VVEBOEmitter Base Voltage 6.0 VICCollector Current (DC) 300 mA

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON PLANAR EPITAXIAL TRANSISTOR PZTA42SOT-223Formed SMD PackageFor use in Telephony and Professional Communication EquipmentComplementary PZTA92ABSOLUTE MAXIMUM RATINGS (Ta=25C unless specified otherwise)DESCRIPTION SYMBOL VALUE UNITSCollector Base Voltage VCBO 300 VVCEOColle

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-223(8R) Plastic-Encapsulate TransistorsSOT-223 PZTA44 TRA NSISTOR (NPN)FEATURES Low current : 300mA(max)1. BASE High voltage: VCEO=400V2. COLLECTOR3. EMITTERMAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 400 V MARKING: VCEO Collector-Emitter Voltage 400

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-223 Plastic-Encapsulate Transistors PZTA42 TRANSISTOR (NPN) SOT-223 FEATURES High breakdown voltage 1. BASE Low collector-emitter saturation voltage 2. COLLECTOR Complementary type: PZTA92(PNP) 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Para meter Value Unit MARKING: VCBO Collector-

SEMICONDUCTOR PZTA44TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORHIGH VOLTAGE APPLICATION. ATELEPHONE APPLICATION.HL2FEATURESHigh Breakdown Voltage.KE BCollector Power Dissipation : PC=2W(TC=25 )1 3JGF FMAXIMUM RATING (Ta=25 )DIM MILLIMETERS1 2 3_CHARACTERISTIC SYMBOL RATING UNITA 6.5 + 0.2C_B 3.5 + 0.2VCBOCollector-Base Voltage 500 V C 1.8

SEMICONDUCTOR PZTA42TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORHIGH VOLTAGE APPLICATION. ATELEPHONE APPLICATION.HL2FEATURESComplementary to PZTA92.KE B1 3JMAXIMUM RATING (Ta=25 )GF FCHARACTERISTIC SYMBOL RATING UNITVCBOCollector-Base Voltage 300 VDIM MILLIMETERS1 2 3_A 6.5 + 0.2VCEOCollector-Emitter Voltage 300 VC_B 3.5 + 0.2C 1.8 MAX

PZTA44 SOT-223 Transistor(NPN)1. BASE SOT-2232. COLLECTOR 1 3. EMITTER Features Low current : 300mA(max) High voltage: VCEO=400V MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 500 VVCEO Collector-Emitter Voltage 400 VDimensions in inches and (millimeters)VEBO Emitter-Base Voltage 6 V IC Collector Cur

PZTA42 SOT-223 Transistor(NPN)1. BASE SOT-2232. COLLECTOR 1 3. EMITTER Features High breakdown voltage Low collector-emitter saturation voltage Complementary type: PZTA92(PNP) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 300 V Dimensions in inches and (millimet

PZTA44NPN Silicon Planar Epitaxial TransistorCOLLECTOR2, 441. BASE2.COLLECTOR 3.EMITTERBASE4.COLLECTOR 11233SOT-223EMITTERABSOLUTE MAXIMUM RATINGS (TA=25 C)SymbolRating Value UnitVCollector-Emitter Voltage CEO V400VCBOCollector-Base Voltage 500 VVEBOEmitter-Base Voltage 6 VIC(DC)Collector Current (DC) 300 mAPDTotal Device Disspation TA=2

PZTA42NPN Silicon Planar Epitaxial TransistorCOLLECTOR2, 441. BASE2.COLLECTOR 3.EMITTERBASE4.COLLECTOR 11233SOT-223EMITTERABSOLUTE MAXIMUM RATINGS (Ta=25 C)SymbolRating Value UnitVCollector-Emitter Voltage CEO V300VCBOCollector-Base Voltage 300 VVEBOEmitter-Base Voltage 6 VIC(DC)Collector Current (DC) 500 mAPDTotal Device Disspation TA=2

SMD Type TransistorsNPN TransistorsPZTA42 (KZTA42)Unit:mmSOT-2236.500.23.000.14 Features High breakdown voltage Low collector-emitter saturation voltage1 2 3 Complementary to PZTA920.2502.30 (typ)Gauge Plane1.Base 2.Collector0.700.13.Emitter4.60 (typ) 4.Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit

SHI KUES PZTA42 NPN Silicon Planar Epitaxial Transistor COLLECTOR2,4 B EMITTER SOT-223 ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Symbol Rating Value UnitVCollector-Emitter Voltage CEO 300 VCollector-Base Voltage V 300 V CBO Emitter-Base Voltage 6 V 500 mA Collector Current (DC) Po Total Device Disspation T =25 C 2 w Aoc Jun